All Transistors. 2SD1797 Datasheet

 

2SD1797 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1797
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 4000
   Noise Figure, dB: -
   Package: ISO126

 2SD1797 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1797 Datasheet (PDF)

 8.1. Size:78K  sanyo
2sd1799.pdf

2SD1797 2SD1797

Ordering number:EN2110BNPN Epitaxial Planar Silicon Transistor2SD1799Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2045B[2SD1799]6.5Features2.35.00.54 High DC current gain (hFE 4000). Wide ASO. Large current capacity. Small and slim package making it

 8.2. Size:26K  sanken-ele
2sd1796.pdf

2SD1797

Equivalent CcircuitBBuilt-in Avalanche Diode for Surge AbsorbingDarlington 2SD1796(3k)(150)ESilicon NPN Triple Diffused Planar TransistorApplication : Driver for Solenoid, Relay and Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)SymbolSymbol 2SD1796 Unit Conditions 2SD1796 Unit

 8.3. Size:203K  shindengen
tp7l10 2sd1791.pdf

2SD1797 2SD1797

SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SD1791 Case : ITO-220(TP7L10) Unit : mm7A NPNRATINGSAbsolute Maximum Ratings ConditionsItem Symbol Ratings UnitStorage Temperature Tstg -55+150 Junction Temperature Tj +150 Collector to Base Voltage VCBO 100 VCollector to Emitter Voltage VCEO 100 VEmitter to Base VoltageVEBO 7 VCollector Current DC I

 8.4. Size:259K  inchange semiconductor
2sd1794.pdf

2SD1797 2SD1797

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1794 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V (Min.) High Switching Speed APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UN

 8.5. Size:201K  inchange semiconductor
2sd1793.pdf

2SD1797 2SD1797

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1793DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE M

 8.6. Size:116K  inchange semiconductor
2sd1792.pdf

2SD1797 2SD1797

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1792 DESCRIPTION With ITO-220 package Switching power transistor DARLINGTON PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter

 8.7. Size:201K  inchange semiconductor
2sd1790.pdf

2SD1797 2SD1797

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1790DESCRIPTIONLow Collector Saturation VoltageHigh DC Current GainHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE MAXIMUM RATINGS

 8.8. Size:85K  inchange semiconductor
2sd1795.pdf

2SD1797 2SD1797

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1795 DESCRIPTION With ITO-220 package Switching power transistor DARLINGTON PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter

 8.9. Size:200K  inchange semiconductor
2sd1791.pdf

2SD1797 2SD1797

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1791DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE M

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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