2SD1802R Datasheet and Replacement

Ordering number:EN2113BPNP/NPN Epitaxial Planar Silicon Transistors2SB1202/2SD1802High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1202/2SD1802]Features Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low collector-to-emitter satura

Ordering number:ENN2113BPNP/NPN Epitaxial Planar Silicon Transistors2SB1202/2SD1802High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1202/2SD1802]6.5Features2.35.00.54 Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low col

2SB1202/2SD1802Bipolar Transistor()50 V, ()3 A, Low VCE(sat) (PNP)NPNSingle TP/TP-FAFeatures www.onsemi.com Adoption of FBET and MBIT Processes Large Current Capacitance and Wide ASO2.4 Low Collector to Emitter Saturation Voltage Fast Switching Speed1 Small and Slim Package Making it Easy to Make2SB1202/2SD1802-used Sets Smaller3 These Devices

UNISONIC TECHNOLOGIES CO., LTD 2SD1802 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1802 applies to voltage regulators, relay drivers, lamp drivers and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed ORDERI

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252 -2L2SD1802 TRANSISTOR (NPN) FEATURES 1.BASE Adoption of FBET,MBIT Processes 2.COLLECTOR Large Current Capacity and Wide ASO Low Collector-to-Emitter Saturation Voltage 3.EMITTER Fast Switching Speed MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para

2SD1802(NPN) TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Adoption of FBET,MBIT processes Large current capacity and wide ASO Low collector-to-emitter saturation voltage Fast switching speed TO-252-2LMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector Base Voltage 60 V VCEO Collector-Emi

2SD1802NPN PLASTIC ENCAPSULATE TRANSISTORSP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1D-PAK(TO-252)ABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage60VCEOVCollector-Emitter Voltage 50VEBOVEmitter-Base Voltage 6.0Collector CurrentICA3.0Collector Power Dissipation PD 1.0 WJunction TemperatureTj-55 to +

SMD Type TransistorsNPN Transistors2SD1802TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 Features0.50 -0.7 Low Collector-to-Emitter Saturation Voltage Fast Switching Speed Large Current Capacity and Wide ASO0.127+0.10.80-0.1max Complementary to 2SB1202+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1802DESCRIPTIONLarge current capacitance and wide ASOSmall and slim package making it easy to make2SD1802/ 2SB1202-used set smallerLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION