2SD1804S Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1804S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 65 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: TO251
2SD1804S Transistor Equivalent Substitute - Cross-Reference Search
2SD1804S Datasheet (PDF)
2sd1804.pdf
Ordering number:EN2086BPNP/NPN Epitaxial Planar Silicon Transistors2SB1204/2SD1804High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1204/2SD1804]Features Low collector-to-emitter saturation voltage. High current and high fT.
2sd1804.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD1804 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS 1TO-220 FEATURES * Low collector-to-emitter saturation voltage * High current and high fT 1* Excellent linerarity of hFE. TO-251* Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller. 1TO-252 ORDERING INFORMATIO
2sd1804.pdf
SMD Type TransistorsNPN Transistors2SD1804TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed0.127+0.1 High Current And High fT. 0.80-0.1max Complementary to 2SB1204+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absol
2sd1804.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1804DESCRIPTIONExcellent linearity of hFELow Collector-Emitter Breakdown Voltage-: V = 50 V(BR)CEOFast switching timeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high current switching appl
2sd1804l-t.pdf
isc Silicon NPN Power Transistor 2SD1804L-TDESCRIPTIONExcellent linearity of hFELow Collector-Emitter Breakdown Voltage-: V = 50 V(BR)CEOFast switching timeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high current switching applicationsABSOLUTE MA
2sd1804-t.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1804-TDESCRIPTIONExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedComplementary to 2SB1204Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high current s
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: KN4F4N
