2SD1844 Datasheet. Specs and Replacement
Type Designator: 2SD1844 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 12
Noise Figure, dB: -
Package: TO126
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2SD1844 datasheet
8.1. Size:136K sanyo
2sd1841.pdf 
Ordering number EN3260A 2SB1231 PNP Epitaxial Planar Silicon Transistor 2SD1841 NPN Triple Diffused Planar Silicon Transistor 2SB1231/2SD1841 100V/25A Switching Applications Applications Package Dimensions Motor drivers, relay drivers, converters, and other unit mm general high-current switching applications. 2022A [2SB1231/2SD1841] Features Large current capacity and wi... See More ⇒
8.2. Size:125K sanyo
2sd1842.pdf
Ordering number EN3261A 2SB1232 PNP Epitaxial Planar Silicon Transistor 2SD1842 NPN Triple Diffused Planar Silicon Transistor 2SB1232/2SD1842 100V/40A Switching Applications Applications Package Dimensions Motor drivers, relay drivers, converters, and other unit mm general high-current switching applications. 2022A [2SB1232/2SD1842] Features Large current capacity and wi... See More ⇒
8.3. Size:136K sanyo
2sd1840.pdf
Ordering number EN3259 2SB1230 PNP Epitaxial Planar Silicon Transistor 2SD1840 NPN Triple Diffused Planar Silicon Transistor 2SB1230/2SD1840 100V/4A Switching Applications Applications Package Dimensions Motor drivers, relay drivers, converters and other unit mm general high-current switching applications. 2022A [2SB1230/2SD1840] Features Large current capacity and wide ... See More ⇒
8.4. Size:76K nec
2sd1843.pdf
DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT mm) dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as mo... See More ⇒
8.5. Size:105K panasonic
2sd1846.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.7. Size:212K inchange semiconductor
2sd1846.pdf
isc Silicon NPN Power Transistor 2SD1846 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
8.8. Size:211K inchange semiconductor
2sd1848.pdf
isc Silicon NPN Power Transistor 2SD1848 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
8.9. Size:217K inchange semiconductor
2sd1841.pdf
isc Silicon NPN Power Transistor 2SD1841 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SB1231 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, relay drivers, converters and other general high-current... See More ⇒
8.10. Size:211K inchange semiconductor
2sd1845.pdf
isc Silicon NPN Power Transistor 2SD1845 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
8.11. Size:212K inchange semiconductor
2sd1849.pdf
isc Silicon NPN Power Transistor 2SD1849 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
8.12. Size:217K inchange semiconductor
2sd1840.pdf
isc Silicon NPN Power Transistor 2SD1840 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SB1230 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, converters and other general high-current switching appl... See More ⇒
8.13. Size:211K inchange semiconductor
2sd1847.pdf
isc Silicon NPN Power Transistor 2SD1847 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
Detailed specifications: 2SD1838, 2SD1839, 2SD183F, 2SD184, 2SD1840, 2SD1841, 2SD1842, 2SD1843, 2SC4793, 2SD1845, 2SD1846, 2SD1847, 2SD1848, 2SD1849, 2SD184F, 2SD185, 2SD1850
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