2SD188S Datasheet and Replacement

   Type Designator: 2SD188S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3

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2SD188S Datasheet (PDF)

8.1. Size:89K sanyo
2sd1883.pdf pdf_icon

Ordering number:EN2430NPN Triple Diffused Planar Silicon Transistor2SD1883Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1883]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

8.2. Size:91K sanyo
2sd1886.pdf pdf_icon

Ordering number:EN2433NPN Triple Diffused Planar Silicon Transistor2SD1886Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1886]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

8.3. Size:89K sanyo
2sd1882.pdf pdf_icon

Ordering number:EN2429NPN Triple Diffused Planar Silicon Transistor2SD1882Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1882]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

8.4. Size:90K sanyo
2sd1881.pdf pdf_icon

Ordering number:EN2428ANPN Triple Diffused Planar Silicon Transistor2SD1881Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1881]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High

8.5. Size:93K sanyo
2sd1885.pdf pdf_icon

Ordering number:EN2432ANPN Triple Diffused Planar Silicon Transistor2SD1885Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1885]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High

8.6. Size:91K sanyo
2sd1887.pdf pdf_icon

Ordering number:EN2434NPN Triple Diffused Planar Silicon Transistor2SD1887Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1887]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

8.7. Size:84K sanyo
2sd1886c.pdf pdf_icon

Ordering number : EN72012SD1886CSANYO SemiconductorsDATA SHEETwww.datasheet4u.comNPN Triple Diffused Planar Silicon Transistor2SD1886CColor TV Horizontal DeflectionOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process.SpecificationsAbsolute Maximum Ratings at Ta=

8.8. Size:88K sanyo
2sd1884.pdf pdf_icon

Ordering number:EN2431NPN Triple Diffused Planar Silicon Transistor2SD1884Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1884]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

8.9. Size:88K sanyo
2sd1880.pdf pdf_icon

Ordering number:EN2427ANPN Triple Diffused Planar Silicon Transistor2SD1880Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1880]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High

8.10. Size:38K rohm
2sd1889.pdf pdf_icon

2SB1340TransistorsTransistors2SD1889(96-650-B88)(96-765-D88)288

8.11. Size:212K inchange semiconductor
2sd1889.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1889DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 3V, I = 2A)FE CE CComplement to Type 2SB1340Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RA

8.12. Size:216K inchange semiconductor
2sd1883.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1883DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

8.13. Size:216K inchange semiconductor
2sd1886.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1886DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

8.14. Size:216K inchange semiconductor
2sd1882.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1882DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

8.15. Size:215K inchange semiconductor
2sd1881.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1881DESCRIPTIONHigh Breakdown Voltage-: V = 1300V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)

8.16. Size:216K inchange semiconductor
2sd1885c.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1885CDESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

8.17. Size:208K inchange semiconductor
2sd188.pdf pdf_icon

isc Silicon NPN Power Transistors 2SD188DESCRIPTIONWith TO-3 packageLarge current capabilityWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100 VCBOV Collector-Emi

8.18. Size:216K inchange semiconductor
2sd1885.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1885DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

8.19. Size:216K inchange semiconductor
2sd1887.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1887DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

8.20. Size:210K inchange semiconductor
2sd1888.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1888DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 3V, I = 2A)FE CE CComplement to Type 2SB1339Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RA

8.21. Size:216K inchange semiconductor
2sd1886c.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1886CDESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

8.22. Size:216K inchange semiconductor
2sd1884.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1884DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

8.23. Size:215K inchange semiconductor
2sd1880.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1880DESCRIPTIONHigh Breakdown Voltage-: V = 1300V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .