2SD189 Datasheet. Specs and Replacement
Type Designator: 2SD189 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
2SD189 Substitution
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2SD189 datasheet
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UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A (DC) *Good hFE linearity. *Low VCE(SAT) *Complements the 2SB1260. ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 2SD1898G-x-AA3-R SOT-223 B C E Tape Reel 2SD1898G-x-AB3-R SOT-89 B C E Tape Reel 2SD1898G-x-AE3-R SOT-23 ... See More ⇒
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1898 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage and Current Excellent DC Current Gain Linearity 3. EMITTER Complement the 2SB1260 Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol P... See More ⇒
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WILLAS 2SD1898 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES High Breakdown Voltage and Current 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Pb-Free package is available Symbol Parameter Value Unit RoHS product for pack... See More ⇒
2SD1899L(BR3DA1899LQF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features f T Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. / Applications... See More ⇒
SMD Type Transistors NPN Transistors 2SD1898 1.70 0.1 Features High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat) 0.42 0.1 0.46 0.1 Complementary to 2SB1260 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage... See More ⇒
2SD1898 1.70 0.1 Features High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat) 0.42 0.1 0.46 0.1 Complementary to 2SB1260 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1 ... See More ⇒
2SD1898 NPN-General use transistor 1W 1.0A 32V 4 Applications Can be used for switching and amplifying in Can be used for switching and amplifying in 1 2 3 various electrical and electronic equipments electrical and electronic equipments SOT-89 SOT 1 Base 2 Collector 3 Collector 3 Emitter Absolute Maximum Ratings (Ta = 25 ) parameters symbol rating unit ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1891 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 90V(Min) (BR)CEO High DC Current Gain h = 5000(Min) @I = 3A FE C Low Collector Saturation Voltgae- V = 3.0V(Max.)@ I = 3A CE(sat) C Complement to Type 2SB1251 Minimum Lot-to-Lot variations for robust device performance and reliable operati... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1890 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 5000(Min) @I = 2A FE C Low Collector Saturation Voltgae- V = 2.5V(Max.)@ I = 2A CE(sat) C Complement to Type 2SB1250 Minimum Lot-to-Lot variations for robust device performance and reliable operati... See More ⇒
isc Silicon NPN Power Transistors 2SD1899-K DESCRIPTION Low Collector Saturation Voltage High Power Dissipation- P = 10W(Max)@T =25 C C Complement to Type 2SB1261-K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. ABSOLUTE MAXIMUM... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1892 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 5000(Min) @I = 4A FE C Low Collector Saturation Voltgae- V = 2.5V(Max.)@ I = 4A CE(sat) C Complement to Type 2SB1252 Minimum Lot-to-Lot variations for robust device performance and reliable operat... See More ⇒
isc Silicon NPN Power Transistor 2SD1897 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Collector Power Dissipation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1894 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = 6A FE C Low-Collector Saturation Voltage- V = 2.5V(Max.)@I = 6A CE(sat) C Complement to Type 2SB1254 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
isc Silicon NPN Power Transistor 2SD1899 DESCRIPTION Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High transition frequency applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V ... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1893 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = 5A FE C Low-Collector Saturation Voltage- V = 2.5V(Max.)@I = 5A CE(sat) C Complement to Type 2SB1253 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
isc Silicon NPN Power Transistor 2SD1896 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Collector Power Dissipation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1895 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = 7A FE C Low-Collector Saturation Voltage- V = 2.5V(Max.)@I = 7A CE(sat) C Complement to Type 2SB1255 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
isc Silicon NPN Power Transistor 2SD1899-Z DESCRIPTION Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High transition frequency applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V... See More ⇒
Detailed specifications: 2SD1883, 2SD1884, 2SD1885, 2SD1886, 2SD1887, 2SD1888, 2SD1889, 2SD188S, MJE350, 2SD1890, 2SD1891, 2SD1892, 2SD1893, 2SD1894, 2SD1895, 2SD1896, 2SD1897
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History: 40311 | 2SD1845
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