All Transistors. 2SD1893 Datasheet

 

2SD1893 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1893

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 15000

Noise Figure, dB: -

Package: TO220

2SD1893 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1893 Datasheet (PDF)

1.1. 2sd1893.pdf Size:54K _panasonic

2SD1893
2SD1893

Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm Complementary to 2SB1253 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 40W HiFi output ? 3.2 0.1 High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V Full-pack package which can be installed to the heat sin

1.2. 2sd1893.pdf Size:129K _inchange_semiconductor

2SD1893
2SD1893

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1893 DESCRIPTION Ў¤ With TO-3PFa package Ў¤ High DC current gain Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB1253 APPLICATIONS Ў¤ Power amplification Ў¤ Optimum for 40W high-fidelity output applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Ў¤ Absolute maximum rati

 4.1. 2sd1899.pdf Size:291K _nec

2SD1893
2SD1893

4.2. 2sd1897.pdf Size:35K _rohm

2SD1893

2SD1897 Transistors Transistors 2SD1757K (96-768-D91) (94S-314-D95) 317

 4.3. 2sd1898 2sd1733 2sd1768s 2sd1863.pdf Size:114K _rohm

2SD1893
2SD1893

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 ?Features ?Dimensions (Unit : mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.50.1 3) Good hFE linearity 1.60.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1 -0.05 0.40.1 0.50.1 0.40.1 1.50.1 1.50.1 3.00.2 (1) Base ROHM : MPT3 ?Str

4.4. 2sd1898.pdf Size:157K _rohm

2SD1893
2SD1893

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 ?Features ?Dimensions (Unit : mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 3) Good hFE linearity -0.1 0.1 1.5 1.60.1 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 (1) (2) (3) 0.4+0.1 -0.05 0.40.1 0.50.1 0.40.1 1.50.1 1.50.1 3.00.2 ?Structure (1) Base Epitaxial planer type ROHM : MPT3

 4.5. 2sd1894.pdf Size:54K _panasonic

2SD1893
2SD1893

Power Transistors 2SD1894 Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm Complementary to 2SB1254 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 60W HiFi output ? 3.2 0.1 High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V Full-pack package which can be installed to the heat sin

4.6. 2sd1895.pdf Size:54K _panasonic

2SD1893
2SD1893

Power Transistors 2SD1895 Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm Complementary to 2SB1255 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 90W HiFi output ? 3.2 0.1 High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V Full-pack package which can be installed to the heat sin

4.7. 2sd1892.pdf Size:55K _panasonic

2SD1893
2SD1893

Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm 10.0 0.2 4.2 0.2 Complementary to 2SB1252 5.5 0.2 2.7 0.2 Features ? 3.1 0.1 Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V Full-pack package which can be installed to the heat

4.8. 2sd1898.pdf Size:416K _secos

2SD1893
2SD1893

2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description SOT-89 The 2SD1898 is designed for switching applications. Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5 TYP. M 0.70 REF.

4.9. 2sd1894.pdf Size:81K _jmnic

2SD1893
2SD1893

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1894 DESCRIPTION · ·With TO-3PFa package ·Optimum for 60W HiFi output ·High foward current transfer ratio ·Low collector saturation voltage ·Complement to type 2SB1254 APPLICATIONS ·Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PA

4.10. 2sd1895.pdf Size:93K _jmnic

2SD1893
2SD1893

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD1895 DESCRIPTION ·With TO-3PFa package ·Optimum for 90W HiFi output ·High foward current transfer ratio hFE ·Low collector-emitter saturation voltage ·Complement to type 2SB1255 APPLICATIONS ·Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratin

4.11. 2sd1899-z.pdf Size:56K _transys

2SD1893

Transys Electronics L I M I T E D TO-252 Plastic-Encapsulated Transistors 2SD1899-Z TRANSISTOR (NPN) TO-252 FEATURES Power dissipation 1. BASE PCM: 2 W (Tamb=25?) 2. COLLECTOR Collector current 3. EMITTER ICM: 3 A 1 2 3 Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55? to +150? ELECTRICAL CHARACTERISTIC

4.12. 2sd1897.pdf Size:80K _inchange_semiconductor

2SD1893
2SD1893

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1897 DESCRIPTION · ·With TO-220Fa package ·Low collector saturation voltage ·High power dissipation:PC=30W@TC=25? APPLICATIONS ·For low frequency power amplifier,power driver and DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and sy

4.13. 2sd1894.pdf Size:129K _inchange_semiconductor

2SD1893
2SD1893

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1894 DESCRIPTION Ў¤ With TO-3PFa package Ў¤ High DC current gain Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB1254 APPLICATIONS Ў¤ Power amplification Ў¤ Optimum for 60W high-fidelity output applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Ў¤ Absolute maximum rati

4.14. 2sd1895.pdf Size:129K _inchange_semiconductor

2SD1893
2SD1893

Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors DESCRIPTION Ў¤ With TO-3PFa package Ў¤ High DC current gain Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB1255 APPLICATIONS Ў¤ Power amplification Ў¤ Optimum for 90W high-fidelity output applications PINNING PIN 1 2 3 Base Collector DESCRIPTION 2SD1895 Absolute maximum rat

4.15. 2sd1892.pdf Size:120K _inchange_semiconductor

2SD1893
2SD1893

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1892 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High DC current gain Ў¤ Low collector saturation voltage Ў¤ DARLINGTON Ў¤ Complement to type 2SB1252 APPLICATIONS Ў¤ Power amplification Ў¤ Optimum for 35W high-fidelity output PINNING PIN 1 2 3 Base Collector DESCRIPTION Ў¤ Absolute maximum

4.16. 2sd1898.pdf Size:311K _htsemi

2SD1893

2SD1898 TRANSISTOR (NPN) SOT-89-3L FEATURES High Breakdown Voltage and Current 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR Complement the 2SB1260 Low Collector-Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Em

4.17. 2sd1899-z.pdf Size:600K _lge

2SD1893
2SD1893

2SD1899-Z(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25? unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 3 A

4.18. 2sd1899.pdf Size:577K _lge

2SD1893
2SD1893

2SD1899 Transistor(NPN) 1.BASE TO-252-2L 2.COLLECTOR 3.EMITTER Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous

4.19. 2sd1899.pdf Size:608K _wietron

2SD1893
2SD1893

2SD1899 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 MAXIMUM RATINGS (TA=25? unless otherwise noted) D-PAK(TO-252) Symbol Parameter Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V V Emitter-Base Voltage VEBO 7 Collector Current -Continuous IC 3 A Collector Power Dissipation PC 1 W Junction Temperature

4.20. 2sd1898.pdf Size:170K _wietron

2SD1893
2SD1893

2SD1898 Epitaxial Planar NPN Transistors SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER C (Ta=25 ) ABSOLUTE MAXIMUM RATINGS Rating Symbol Limits Unit Vdc Collector-Base Voltage V 100 CBO Vdc Collector-Emitter Voltage 80 VCEO Vdc Emitter-Base Voltage 5 VEBO IC A(DC) 1 Collector Current ICP 2 A (Pulse)* PC 0.5 W Collector Power Dissipation T , Tstg C Junction Temperatur

4.21. 2sd1898.pdf Size:262K _willas

2SD1893
2SD1893

WILLAS 2SD1898 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES High Breakdown Voltage and Current 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25? unless otherwise noted) Pb-Free package is available Symbol Parameter Value Unit RoHS product for packing c

4.22. 2sd1899l.pdf Size:609K _blue-rocket-elect

2SD1893
2SD1893

2SD1899L(BR3DA1899LQF) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126F Plastic Package. 特征 / Features 饱和压降低,电流大,f 高,极好的放大线性,开关速度快。 T Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. 用途 / Applications

4.23. 2sd1898.pdf Size:603K _kexin

2SD1893
2SD1893

SMD Type Transistors NPN Transistors 2SD1898 1.70 0.1 ■ Features ● High VCEO, VCEO=80V ● High IC, IC=1A (DC) ● Low VCE (sat) 0.42 0.1 0.46 0.1 ● Complementary to 2SB1260 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage

Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
Back to Top