2SD1903R Specs and Replacement
Type Designator: 2SD1903R
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO218
2SD1903R Substitution
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2SD1903R datasheet
Ordering number EN2263A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1267/2SD1903 30V/8A High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters and other general high-current switching. 2049B [2SB1267/2SD1903] Features Suitable for sets whose height is restricted. Low collector to emitte... See More ⇒
Ordering number EN2266A PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1270/2SD1906 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2049B applications. [2SB1270/2SD1906] Features Suitable for sets whose height is restricted. Low collec... See More ⇒
Ordering number EN2267B PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1271/2SD1907 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2049B applications. [2SB1271/2SD1907] Features Suitable for sets whose height is restricted. Low collec... See More ⇒
Detailed specifications: 2SD1900, 2SD1901, 2SD1902, 2SD1902Q, 2SD1902R, 2SD1902S, 2SD1903, 2SD1903Q, TIP41, 2SD1903S, 2SD1904, 2SD1904Q, 2SD1904R, 2SD1904S, 2SD1905, 2SD1905Q, 2SD1905R
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