2SD1904 Specs and Replacement
Type Designator: 2SD1904
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO218
2SD1904 Substitution
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2SD1904 datasheet
Ordering number EN2264B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1268/2SD1904 High-Current Switching Applicatons Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2049B applications. [2SB1268/2SD1904] Features Suitable for sets whose height is restricted. Low collector to... See More ⇒
Ordering number EN2266A PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1270/2SD1906 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2049B applications. [2SB1270/2SD1906] Features Suitable for sets whose height is restricted. Low collec... See More ⇒
Ordering number EN2267B PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1271/2SD1907 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2049B applications. [2SB1271/2SD1907] Features Suitable for sets whose height is restricted. Low collec... See More ⇒
Detailed specifications: 2SD1902, 2SD1902Q, 2SD1902R, 2SD1902S, 2SD1903, 2SD1903Q, 2SD1903R, 2SD1903S, BC337, 2SD1904Q, 2SD1904R, 2SD1904S, 2SD1905, 2SD1905Q, 2SD1905R, 2SD1905S, 2SD1906
Keywords - 2SD1904 pdf specs
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