2SD1908 Datasheet. Specs and Replacement
Type Designator: 2SD1908 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 330 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 45
Package: TO218
2SD1908 Substitution
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2SD1908 datasheet
Ordering number EN3971 NPN Epitaxial Planar Silicon Transistor 2SD1908 CRT Display Horizontal Deflection Output Applications Features Package Dimensions Fast switching speed. unit mm Especially suited for use in high-definition CRT 2049C display VCC=6 to 12V. [2SD1908] Wide ASO and highly resistant to breakdown. 10.2 4.5 1.3 1.2 0.8 0.4 1 2 3 1 Base 2 Coll... See More ⇒
Ordering number EN2266A PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1270/2SD1906 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2049B applications. [2SB1270/2SD1906] Features Suitable for sets whose height is restricted. Low collec... See More ⇒
Ordering number EN2267B PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1271/2SD1907 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2049B applications. [2SB1271/2SD1907] Features Suitable for sets whose height is restricted. Low collec... See More ⇒
Detailed specifications: 2SD1906, 2SD1906Q, 2SD1906R, 2SD1906S, 2SD1907, 2SD1907Q, 2SD1907R, 2SD1907S, 2SD718, 2SD1909, 2SD191, 2SD1910, 2SD1911, 2SD1912, 2SD1912Q, 2SD1912R, 2SD1912S
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History: MJ14002G | CHT1544RNGP
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