All Transistors. 2SD1914 Datasheet

 

2SD1914 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1914
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 15000
   Noise Figure, dB: -
   Package: TO247

 2SD1914 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1914 Datasheet (PDF)

 ..1. Size:595K  sanyo
2sd1914.pdf

2SD1914
2SD1914

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res

 8.3. Size:701K  sanyo
2sd1912.pdf

2SD1914
2SD1914

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res

 8.4. Size:34K  sanyo
2sb1274 2sd1913.pdf

2SD1914
2SD1914

Ordering number : ENN2246B2SB1274/2SD1913PNP/NPN Epitaxial Planar Silicon Transistors2SB1274/2SD191360V/3A Low-FrequencyPower Amplifier ApplicationsApplicationsPackage Dimensions General power amplifier.unit : mm2041A[2SB1274/2SD1913]4.510.02.8Features3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High br

 8.5. Size:63K  rohm
2sd2211 2sd1918 2sd1857a.pdf

2SD1914
2SD1914

2SD2211 / 2SD1918 / 2SD1857ATransistorsPower Transistor (160V , 1.5A)2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm)1) High breakdown voltage.(BVCEO = 160V)2) Low collector output capacitance.2SD22114.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V)(1)3) High transition frequency.(fT = 80MHZ)(2)4) Complements the 2SB1275 / 2SB1236A.(3)(1) Base(Gate)

 8.6. Size:48K  rohm
2sb1275 2sb1236a 2sb1569a 2sb1186a 2sd2211 2sd1918 2sd1857a 2sd2400a 2sd1763a.pdf

2SD1914

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

 8.7. Size:143K  rohm
2sd1918.pdf

2SD1914
2SD1914

Power Transistor (160V , 1.5A) 2SD1918 / 2SD1857A Features Dimensions (Unit : mm) 1) High breakdown voltage.(BVCEO=160V) 2SD19182) Low collector output capacitance. 5.5 1.5 (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 0.94) Complements the 2SB1275. C0.50.8Min.1.5Absolute maximum ratings (Ta = 25C) 2.59.5Parameter Symbol Limits Unit

 8.8. Size:100K  wingshing
2sd1910.pdf

2SD1914

2SD1910 Silicon Diffused Power TransistorGENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim-arily for use in horizontal deflection circuites of colour television receiversQUICK REFERENCE DATA TO-3PFMSYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VCo

 8.9. Size:100K  wingshing
2sd1911.pdf

2SD1914

Silicon Diffused Power Transistor2SD1911GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim-arily for use in horizontal deflection circuites of colour television receiversQUICK REFERENCE DATA TO-3PFMSYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VC

 8.10. Size:1071K  kexin
2sd1918.pdf

2SD1914
2SD1914

SMD Type TransistorsNPN Transistors2SD1918TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High breakdown voltage. Low collector output capacitance.0.127 High transition frequency+0.10.80-0.1max Complementary to 2SB1275+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Max

 8.11. Size:217K  inchange semiconductor
2sd1912.pdf

2SD1914
2SD1914

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1912DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOWide Area of Safe OperationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(

 8.12. Size:213K  inchange semiconductor
2sd1913.pdf

2SD1914
2SD1914

isc Silicon NPN Power Transistor 2SD1913DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1274Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.13. Size:214K  inchange semiconductor
2sd1910.pdf

2SD1914
2SD1914

isc Silicon NPN Power Transistor 2SD1910DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

 8.14. Size:189K  inchange semiconductor
2sd1918.pdf

2SD1914
2SD1914

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1918DESCRIPTIONHigh fTfT=80MHz(TYP)High Collector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOExcellent linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor drivers,LED driver,Power supplyABSOLUTE MAXIMUM RATI

 8.15. Size:214K  inchange semiconductor
2sd1911.pdf

2SD1914
2SD1914

isc Silicon NPN Power Transistor 2SD1911DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD194

 

 
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