All Transistors. 2SD1931 Datasheet

 

2SD1931 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1931

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 10000

Noise Figure, dB: -

Package: TO92

2SD1931 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1931 Datasheet (PDF)

4.1. 2sd1936.pdf Size:190K _sanyo

2SD1931
2SD1931

Ordering number:EN2468 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1296/2SD1936 AF Amplifier Applications Applications Package Dimensions · AF power amplifier, medium-speed switching, small- unit:mm sized motor drivers. 2033 [2SB1296/2SD1936] Features · Large current capacity. · Low collector to emitter saturation voltage. · Wide ASO. B : Base C : Collector ( ) : 2SB

4.2. 2sd1935.pdf Size:133K _sanyo

2SD1931
2SD1931

Ordering number:EN2516 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1295/2SD1935 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · AF power amplifier, medium-speed switching, small- unit:mm sized motor drivers. 2018A [2SB1295/2SD1935] Features · Large current capacity. · Low collector to emitter saturation voltage. · Very small-size

 4.3. 2sd1939.pdf Size:124K _nec

2SD1931
2SD1931



4.4. 2sd1938.pdf Size:88K _panasonic

2SD1931
2SD1931

Transistors 2SD1938(F) Silicon NPN epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 For muting 0.16+0.10 –0.06 3 For DC-DC converter ■ Features • Low ON resistance Ron 1 2 • High forward current transfer ratio hFE (0.95) (0.95) • Mini type package, allowing downsizing of the equipment and 1.9±0.1 2.90+0.20 automatic insertion t

 4.5. 2sd1934 e.pdf Size:40K _panasonic

2SD1931
2SD1931

Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0± 0.2 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 0.7± 0.1 Absolute Maximum Ratings (Ta=25˚C) Paramete

4.6. 2sd1937 e.pdf Size:41K _panasonic

2SD1931
2SD1931

Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SB1297 5.0± 0.2 4.0± 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. Allowing supply with the radial taping. 0.7± 0.1 Absolute Maximum Ratings (Ta=25˚C) +0.15 +0.15 0.45 –0.1 0.45

4.7. 2sd1934.pdf Size:36K _panasonic

2SD1931
2SD1931

Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0± 0.2 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 0.7± 0.1 Absolute Maximum Ratings (Ta=25˚C) Paramete

4.8. 2sd1932.pdf Size:210K _inchange_semiconductor

2SD1931
2SD1931

isc Silicon NPN Darlington Power Transistor 2SD1932 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 80V(Min) (BR)CEO ·High DC Current Gain- : h = 1000(Min)@ (V = 3V, I = 2A) FE CE C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARA

4.9. 2sd1933.pdf Size:212K _inchange_semiconductor

2SD1931
2SD1931

isc Silicon NPN Darlington Power Transistor 2SD1933 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 80V(Min) (BR)CEO ·High DC Current Gain- : h = 1000(Min)@ (V = 3V, I = 2A) FE CE C ·Complement to Type 2SB1342 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RAT

4.10. 2sd1936m.pdf Size:822K _blue-rocket-elect

2SD1931
2SD1931

2SD1936M(BR3DG1936M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 大电流容量,低饱和压降,宽阔的安全工作区 Large current capacity ,low VCE sat) ,wide ASO. ( 用途 / Applications 用于音频放大,中速开关,小型驱动电动机

4.11. 2sd1938.pdf Size:935K _kexin

2SD1931
2SD1931

SMD Type Transistors NPN Transistors 2SD1938 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=300mA ● Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Coll

4.12. 2sd1935.pdf Size:1025K _kexin

2SD1931
2SD1931

SMD Type Transistors NPN Transistors 2SD1935 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● Large current capacity. ● Low collector to emitter saturation voltage. ● Complimentary to 2SB1295 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Bas

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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