2SD1944 Datasheet and Replacement

   Type Designator: 2SD1944
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: TO220

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2SD1944 Datasheet (PDF)

..1. Size:29K rohm
2sd1944.pdf pdf_icon

8.1. Size:44K 1
2sd189x 2sd190x 2sd191x 2sd192x 2sd193x 2sd194x.pdf pdf_icon

8.2. Size:231K toshiba
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8.3. Size:221K toshiba
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8.4. Size:83K sanyo
2sd1940.pdf pdf_icon

Ordering number:EN2533NPN Epitaxial Planar Silicon Transistor2SD194085V/6A, AF 25 to 30WOutput ApplicationsFeatures Package Dimensions Micaless package facilitating mounting.unit:mm Wide ASO.2041A[2SD1940]4.510.02.83.22.41.61.20.70.751 2 31 : Base2.55 2.552 : Collector3 : Emitter2.55 2.55SANYO : TO-220MLSpecificationsAbsolute Maximum

8.5. Size:977K rohm
2sd1949fra 2sd1484kfra.pdf pdf_icon

Data SheetAEC-Q101 QualifiedMedium Power Transistor (50V,0.5A)2SD1949FRA / 2SD1484KFRA2SD1949 / 2SD1484KFeatures Dimensions (Unit : mm)1) High current.(IC=0.5A)UMT32) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.(SC-70)(1) Emitter(2) Bace(3) CollectorAbsolute maximum rationgs (Ta=25 C)SMT3(SC-59)Parameter Symbol Limits Unit

8.6. Size:106K rohm
2sd1949 2sd1949 2sd1484k.pdf pdf_icon

Data SheetMedium Power Transistor (50V,0.5A)MediumPowerTransistor(50V,0.5A)2SD1949 / 2SD1484K2SD19492SD1484KFeatures Dimensions (Unit : mm)1) High current.(IC=0.5A)UMT32) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.(SC-70)(1) Emitter(2) Bace(3) C

8.7. Size:1672K rohm
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2SD1949 / 2SD1484KDatasheetMiddle Power Transistor (50V, 500mA)lOutlinelParameter Value SOT-323 SOT-346VCEO50VIC500mA 2SD1949 2SD1484K(UMT3) (SMT3) lFeatures lInner circuitl l1)High current. (IC=0.5A)2)Low VCE(sat) VCE(sat)400mV at IC=150mA/IB=15

8.8. Size:213K inchange semiconductor
2sd1940.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1940DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 85V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF 25~30W output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

8.9. Size:215K inchange semiconductor
2sd1941.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1941DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for CTV/character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Ba

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .