2SD1953 Datasheet. Specs and Replacement
Type Designator: 2SD1953 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20000
Package: TO128
2SD1953 Substitution
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2SD1953 datasheet
Ordering number EN2507 NPN Epitaxial Planar Silicon Transistor 2SD1953 120V/1.5A Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers. unit mm 2009A Features [2SD1953] 8.0 2.7 Darlington connection. 4.0 High DC current gain. Low dependence of DC current gain on temperature. 3.0 1.6 0.8 0.8 0.6 0.5 1 Emitte... See More ⇒
Ordering number EN2549A NPN Triple Diffused Planar Silicon Transistor 2SD1958 TV Horizontal Deflection Output High-Current Switching Applications Features Package Dimensions Excellent tf permitting efficient drive with less unit mm internal dissipation. 2041A [2SD1958] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Base 2.55 2.55 2 Collector 3 Emitter 2.55 2.55... See More ⇒
2SD1957 Transistors Transistors 2SD2061 (94L-919 D301) (94L-1016-D304) 315 ... See More ⇒
Detailed specifications: 2SD1947, 2SD1947A, 2SD1948, 2SD1949, 2SD195, 2SD1950, 2SD1951, 2SD1952, BD222, 2SD1955, 2SD1956, 2SD1957, 2SD1958, 2SD1959, 2SD196, 2SD1960, 2SD1961
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