2SD1961 Datasheet. Specs and Replacement
Type Designator: 2SD1961 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO92
2SD1961 Substitution
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2SD1961 datasheet
2SB1308 Transistors Transistors 2SD1963 (94S-166-B204) (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference o... See More ⇒
Power Transistors 2SD1964 Silicon NPN epitaxial planar type For power switching Unit mm Features 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maxi... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1966 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
Detailed specifications: 2SD1953, 2SD1955, 2SD1956, 2SD1957, 2SD1958, 2SD1959, 2SD196, 2SD1960, C945, 2SD1962M, 2SD1963, 2SD1964, 2SD1965, 2SD1966, 2SD1967, 2SD1968, 2SD1969
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