All Transistors. 2SD1964 Datasheet

 

2SD1964 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1964
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 130 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220

 2SD1964 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1964 Datasheet (PDF)

 ..1. Size:55K  panasonic
2sd1964.pdf

2SD1964
2SD1964

Power Transistors2SD1964Silicon NPN epitaxial planar typeFor power switchingUnit: mmFeatures 10.0 0.2 4.2 0.25.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 3.1 0.1 Full-pack package which can be installed to the heat sink withone screwAbsolute Maxi

 8.2. Size:47K  rohm
2sb1308 2sd1963.pdf

2SD1964
2SD1964

2SB1308TransistorsTransistors2SD1963(94S-166-B204)(94S-342-D204)290Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference o

 8.3. Size:181K  inchange semiconductor
2sd1966.pdf

2SD1964
2SD1964

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1966DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: OC811 | MUN2135T1G

 

 
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