2SD1966 Datasheet and Replacement

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1966DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

2SB1308TransistorsTransistors2SD1963(94S-166-B204)(94S-342-D204)290Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference o

Power Transistors2SD1964Silicon NPN epitaxial planar typeFor power switchingUnit: mmFeatures 10.0 0.2 4.2 0.25.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 3.1 0.1 Full-pack package which can be installed to the heat sink withone screwAbsolute Maxi