2SD1975 Datasheet PDF and Equivalents Search

 ..1. Size:54K  panasonic

 2sd1975.pdf

Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Unit mm Complementary to 2SB1317 and 2SB1317A 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) 1.5 High transition frequency fT Optimum for the output stage o... See More ⇒

 ..2. Size:216K  inchange semiconductor

 2sd1975.pdf

isc Silicon NPN Power Transistor 2SD1975 DESCRIPTION Good Linearity of h FE Wide Area of Safe Operation High DC Current-Gain Bandwidth Product Complement to Type 2SB1317 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplification Optimum for the output stage of a Hi-Fi audio amplifier. ABSOLUTE MAXIMUM RATING... See More ⇒

 ..3. Size:104K  inchange semiconductor

 2sd1975 2sd1975a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1975 2SD1975A DESCRIPTION With TO-3PL package Complement to type 2SB1317/1317A Wide area of safe operation High transition frequency fT APPLICATIONS For high power amplification Optimum for the output stage of a Hi-Fi audio amplifier PINNING PIN DESCRIPTION 1 Base Collector;conne... See More ⇒

 8.1. Size:42K  panasonic

 2sd1979 e.pdf

Transistor 2SD1979 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter 2.1 0.1 0.425 1.25 0.1 0.425 Features 1 Low ON resistance Ron. High foward current transfer ratio hFE. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absol... See More ⇒

 8.2. Size:37K  panasonic

 2sd1979.pdf

Transistor 2SD1979 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter 2.1 0.1 0.425 1.25 0.1 0.425 Features 1 Low ON resistance Ron. High foward current transfer ratio hFE. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absol... See More ⇒

 8.3. Size:36K  hitachi

 2sd1976.pdf

2SD1976 Silicon NPN Triple Diffused Application High voltage switching, igniter Feature Built-in High voltage zener diode (300 V) High Speed switching Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 1.6 k 160 2 3 (Typ) (Typ) 3 2SD1976 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 300 V Col... See More ⇒

 8.4. Size:34K  hitachi

 2sd1974.pdf

2SD1974 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 2, 4 1 2 3 1 ID 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 3 2SD1974 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 6V Collector current IC 0.8 A Collect... See More ⇒

 8.5. Size:32K  hitachi

 2sd1978.pdf

2SD1978 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Complementary pair with 2SB1387 Outline TO-92MOD 2 3 ID 1. Emitter 2 k 0.5 k 2. Collector (Typ) (Typ) 3. Base 1 3 2 1 2SD1978 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to... See More ⇒

 8.6. Size:32K  hitachi

 2sd1970.pdf

2SD1970 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 32 k 0.4 k 2 3 (Typ) (Typ) 1 2SD1970 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 24 V Collector to emitter voltage VCEO 24 V Emitter to base voltage VEBO 7V Collector current IC 2A Col... See More ⇒

 8.7. Size:32K  no

 2sd1977.pdf

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 8.8. Size:945K  kexin

 2sd1974.pdf

SMD Type Transistors NPN Transistors 2SD1974 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.8A C Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 B ID 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitter - Ba... See More ⇒

 8.9. Size:189K  inchange semiconductor

 2sd1976.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1976 DESCRIPTION Fast Switching Speed High DC Current Gain Built-in high voltage zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching Igniter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base... See More ⇒