2SD1980 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1980
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 3000
Noise Figure, dB: -
Package: TO218
2SD1980 Transistor Equivalent Substitute - Cross-Reference Search
2SD1980 Datasheet (PDF)
2sd2195 2sd1980 2sd1867 2sd2398.pdf
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)
2sd1980.pdf
Power Transistor (100V, 2A) 2SD1980 Features Dimensions (Unit : mm) 1) Darlington connection for high DC current gain. 2SD19802) Built-in resistor between base and emitter. 6.55.12.33) Built-in damper diode. 0.54) Complements the 2SB1316. inner circuit C0.750.65B 0.92.32.3(1) (2) (3)0.51.0R1 R2(1) BaseE(2) CollectorR1 3.5k B : Base
2sd1980.pdf
isc Silicon NPN Power Transistor 2SD1980DESCRIPTIONDarlington connection for high DC current gainBuilt in resistor between base and emitterBuilt in damper diodeComplementary PNP types:2SB1316100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor drivers,LED driver,Power supplyABSOLUTE MAXIMUM RA
2sd1981.pdf
Ordering number:EN2534NPN Epitaxial Planar Silicon Darlington Transistor2SD1981Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2006B[2SD1981]6.0Features4.75.0 Darlington connection (on-chip bias resistance,damper diode). High DC current gain. Low dependence of D
2sd1985.pdf
Power Transistors2SD1985, 2SD1985ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB1393 and 2SB1393AUnit: mmFeatures High forward current transfer ratio hFE which has satisfactory linearity 10.0 0.2 4.2 0.25.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink wi
2sd1988.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1988DESCRIPTIONHigh DC Current Gain-: h = 3000(Min)@ I = 1AFE CLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CIncorporating a built-in zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow-frequency amplification
2sd1985a.pdf
isc Silicon NPN Power Transistor 2SD1985ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min.)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 1.2V(Max,)@ I = 3ACE(sat) CComplement to Type 2SB1393AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.
2sd1985 2sd1985a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1985 2SD1985A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SB1393 /1393A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplifie
2sd1982.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1982DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorGeneral purpose power amplifie
2sd1986.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1986DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 2AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSw
2sd1987.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1987DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 2AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSw
2sd198.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SD198DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOExcellent Safe Operating AreaFast Switching SpeedWith TO-3 Package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVoltage regulator.Switching mode po
2sd1985.pdf
isc Silicon NPN Power Transistor 2SD1985DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 1.2V(Max,)@ I = 3ACE(sat) CComplement to Type 2SB1393Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.A
2sd1983.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1983DESCRIPTIONHigh DC Current Gain: h = 4000(Min) @I = 1AFE CLow Collector Saturation Voltgae-: V = 1.5V(Max.)@ I = 1ACE(sat) CIncorporating a built-in zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low-frequency amplificationAB
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .