All Transistors. 2SD1981 Datasheet

 

2SD1981 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1981

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 24000

Noise Figure, dB: -

Package: TO92

2SD1981 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1981 Datasheet (PDF)

1.1. 2sd1981.pdf Size:71K _sanyo

2SD1981
2SD1981

Ordering number:EN2534 NPN Epitaxial Planar Silicon Darlington Transistor 2SD1981 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit:mm voltage regulator control. 2006B [2SD1981] 6.0 Features 4.7 5.0 Darlington connection (on-chip bias resistance, damper diode). High DC current gain. Low dependence of DC curre

4.1. 2sd1980.pdf Size:128K _rohm

2SD1981
2SD1981

Power Transistor (100V, 2A) 2SD1980 ?Features ?Dimensions (Unit : mm) 1) Darlington connection for high DC current gain. 2SD1980 2) Built-in resistor between base and emitter. 6.5 5.1 2.3 3) Built-in damper diode. 0.5 4) Complements the 2SB1316. ?inner circuit C 0.75 0.65 B 0.9 2.3 2.3 (1) (2) (3) 0.5 1.0 R1 R2 (1) Base E (2) Collector R1 3.5k? B : Base ROHM : CP

4.2. 2sd2195 2sd1980 2sd1867 2sd2398.pdf Size:66K _rohm

2SD1981

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)

 4.3. 2sd1985.pdf Size:47K _panasonic

2SD1981
2SD1981

Power Transistors 2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A Unit: mm Features High forward current transfer ratio hFE which has satisfactory linearity 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one

4.4. 2sd198.pdf Size:148K _inchange_semiconductor

2SD1981
2SD1981

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD198 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·voltage regulator ·Inverters ·Switching mode power supply PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CO

 4.5. 2sd1985 2sd1985a.pdf Size:103K _inchange_semiconductor

2SD1981
2SD1981

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1985 2SD1985A DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB1393 /1393A APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified o

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
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