2SD2000 Datasheet and Replacement
Type Designator: 2SD2000
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO220
2SD2000 Transistor Equivalent Substitute - Cross-Reference Search
2SD2000 Datasheet (PDF)
2sd2000.pdf
Power Transistors 2SD2000 Silicon NPN triple diffusion planar type For power switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching Satisfactory linearity of foward current transfer ratio hFE 3.1 0.1 Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute Ma... See More ⇒
2sd2000.pdf
isc Silicon NPN Power Transistor 2SD2000 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO High Speed Switching Good Linearity of h FE High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
2sd200.pdf
NPN TRIPLE DIFFUSED 2SD200 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector C... See More ⇒
Datasheet: 2SD1994 , 2SD1995 , 2SD1996 , 2SD1997 , 2SD1998 , 2SD1999 , 2SD20 , 2SD200 , SS8050 , 2SD2001 , 2SD2002 , 2SD200A , 2SD201 , 2SD2012 , 2SD2012G , 2SD2012Y , 2SD2014 .
Keywords - 2SD2000 transistor datasheet
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