2SD2000 Datasheet. Specs and Replacement

Type Designator: 2SD2000  πŸ“„πŸ“„ 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 35 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 Β°C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220

 2SD2000 Substitution

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2SD2000 datasheet

 ..1. Size:55K  panasonic

 2sd2000.pdf pdf_icon

2SD2000

Power Transistors 2SD2000 Silicon NPN triple diffusion planar type For power switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching Satisfactory linearity of foward current transfer ratio hFE 3.1 0.1 Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute Ma... See More ⇒

 ..2. Size:215K  inchange semiconductor

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2SD2000

isc Silicon NPN Power Transistor 2SD2000 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO High Speed Switching Good Linearity of h FE High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒

 8.1. Size:87K  rohm

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2SD2000

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 8.2. Size:69K  wingshing

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2SD2000

NPN TRIPLE DIFFUSED 2SD200 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector C... See More ⇒

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Detailed specifications: 2SD1994, 2SD1995, 2SD1996, 2SD1997, 2SD1998, 2SD1999, 2SD20, 2SD200, SS8050, 2SD2001, 2SD2002, 2SD200A, 2SD201, 2SD2012, 2SD2012G, 2SD2012Y, 2SD2014

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