2SD2012G Datasheet. Specs and Replacement
Type Designator: 2SD2012G 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 9 MHz
Forward Current Transfer Ratio (hFE), MIN: 150
Package: TO220
2SD2012G Substitution
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2SD2012G datasheet
2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications Unit mm Low saturation voltage VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) High power dissipation PC = 25 W (Tc = 25 C) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage... See More ⇒
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO 220F 2SD2012 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio frequency power amplifier applications High DC current gain 3. EMITTER 1 2 Low saturation voltage 3 High power dissipation Equivalent Circuit 2SD2012=Device code Solid dot=Green moldinn compound de... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2012 DESCRIPTION High DC Current Gain- h = 100 (Min)@ I = 0.5A FE C Low Saturation Voltage- V = 1.0V (Max) CE(sat) High Power Dissipation P = 25 W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier... See More ⇒
Detailed specifications: 2SD20, 2SD200, 2SD2000, 2SD2001, 2SD2002, 2SD200A, 2SD201, 2SD2012, A1013, 2SD2012Y, 2SD2014, 2SD2015, 2SD2016, 2SD2017, 2SD2018, 2SD2019, 2SD202
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