All Transistors. 2SD2040 Datasheet

 

2SD2040 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD2040
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO126

 2SD2040 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD2040 Datasheet (PDF)

 8.1. Size:131K  sanyo
2sd2049.pdf

2SD2040
2SD2040

Ordering number:EN2752BNPN Triple Diffused Planar Silicon Darlington Transistor2SD2049Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2049C[2SD2049]10.24.5Features1.3 Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wi

 8.2. Size:78K  sanyo
2sd2048.pdf

2SD2040
2SD2040

Ordering number:EN2751BNPN Triple Diffused Planar Silicon Darlington Transistor2SD2048Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2049C[2SD2048]10.24.5Features1.3 Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wi

 8.3. Size:466K  fuji
2sd2047.pdf

2SD2040
2SD2040

 8.4. Size:32K  hitachi
2sd2046.pdf

2SD2040
2SD2040

2SD2046Silicon NPN Epitaxial, DarlingtonApplicationLow frequency power amplifierOutlineTO-92MOD23ID1. Emitter2 k 0.5 2. Collector (Typ) (Typ)13. Base3212SD2046Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 50 VEmitter to base voltage VEBO 7VCollector current IC 1.5 ACollector peak current ic (peak)

 8.5. Size:26K  sanken-ele
2sd2045.pdf

2SD2040

Equivalent CcircuitBDarlington 2SD2045(2.5k)(200)ESilicon NPN Triple Diffused Planar TransistorApplication : Driver for Solenoid, Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SD2045 Symbol Conditions 2SD2045 UnitUnit0.20.2 5.515.60.23.45VCBO 120 ICBO VCB=120

 8.6. Size:203K  inchange semiconductor
2sd2045.pdf

2SD2040
2SD2040

isc Silicon NPN Darlington Power Transistor 2SD2045DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned of driver

 8.7. Size:203K  inchange semiconductor
2sd2047.pdf

2SD2040
2SD2040

isc Silicon NPN Power Transistor 2SD2047DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N6593 | 3DD13005G8D | MRF648 | 2SD1935-7

 

 
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