All Transistors. 2SD2068 Datasheet

 

2SD2068 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD2068

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 18000

Noise Figure, dB: -

Package: TO92

2SD2068 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD2068 Datasheet (PDF)

4.1. 2sd2061.pdf Size:39K _rohm

2SD2068

2SD1957 Transistors Transistors 2SD2061 (94L-919D301) (94L-1016-D304) 315

4.2. 2sd2064.pdf Size:51K _panasonic

2SD2068
2SD2068

Power Transistors 2SD2064 Silicon NPN triple diffusion planar type For high power amplification Unit: mm Complementary to 2SB1371 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics ? 3.2 0.1 Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio ampli

 4.3. 2sd2067.pdf Size:54K _panasonic

2SD2068
2SD2068

Transistor 2SD2067 (Tentative) Unit: mm Silicon NPN epitaxial planer type 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 For low-frequency output amplification 0.65 max. Features Darlington connection. High foward current transfer ratio hFE. +0.1 Large peak collector current ICP. 0.450.05 2.5 0.5 2.5 0.5 High collector to emitter voltage VCEO. 1 2 3 Allowing supply with th

4.4. 2sd2067 e.pdf Size:59K _panasonic

2SD2068
2SD2068

Transistor 2SD2067 (Tentative) Unit: mm Silicon NPN epitaxial planer type 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 For low-frequency output amplification 0.65 max. Features Darlington connection. High foward current transfer ratio hFE. +0.1 Large peak collector current ICP. 0.450.05 2.5 0.5 2.5 0.5 High collector to emitter voltage VCEO. 1 2 3 Allowing supply with th

 4.5. 2sd2061.pdf Size:108K _jmnic

2SD2068
2SD2068

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2061 DESCRIPTION · ·With TO-220Fa package ·Low saturation voltage ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 emitter Fig.1 simplified outline (TO-220Fa) and symbol A

4.6. 2sd2060.pdf Size:46K _jmnic

2SD2068
2SD2068

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2060 DESCRIPTION ·With TO-220F package ·Complement to type 2SB1368 ·Low collector saturation voltage: VCE(SAT)=1.7V(Max) at IC=3A,IB=0.3A ·Collector power dissipation: PC=25W(TC=25?) APPLICATIONS ·With general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplif

4.7. 2sd2061.pdf Size:125K _inchange_semiconductor

2SD2068
2SD2068

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2061 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Low collector saturation voltage Ў¤ Excellent DC current gain characteristics Ў¤ Wide safe operating area APPLICATIONS Ў¤ For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Ў¤ Absolute maximum ratings (Ta=

4.8. 2sd2066.pdf Size:125K _inchange_semiconductor

2SD2068
2SD2068

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2066 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Wide area of safe operation Ў¤ Complement to type 2SB1373 APPLICATIONS Ў¤ For high power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum r

4.9. 2sd2065.pdf Size:263K _inchange_semiconductor

2SD2068
2SD2068

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2065 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1372 APPLICATIONS ·Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-

4.10. 2sd2060.pdf Size:180K _inchange_semiconductor

2SD2068
2SD2068

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2060 DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1368 Ў¤ Low collector saturation voltage: VCE(SAT)=1.7V(Max) at IC=3A,IB=0.3A Ў¤ Collector power dissipation: PC=25W(TC=25Ўж ) APPLICATIONS Ў¤ With general purpose applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Absolu

4.11. 2sd2061 to-220.pdf Size:217K _lge

2SD2068
2SD2068

2SD2061(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Low saturation voltage Excellent DC current gain characteristice MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Paramenter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V

4.12. 2sd2061.pdf Size:217K _lge

2SD2068
2SD2068

2SD2061(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Low saturation voltage Excellent DC current gain characteristice MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Paramenter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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