2SD2141 Datasheet and Replacement

Equivalent circuitCBuilt-in Avalanche Diode Bfor Surge AbsorbingDarlington 2SD2141(1.5k)(100)ESilicon NPN Triple Diffused Planar Transistor Application : Ignitor, Driver for Solenoid and Motor, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SD2141 Symbol Conditions 2SD2141 UnitUn

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2141DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ I = 3AFE CLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 4ACE(sat) CIncorporating a built-in zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in ignitor

2SD2142K / 2SC2062STransistorsTransistors2SD2470(94L-570-D25)(SPEC-D230)316Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for ref

2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (6010V, 2A) 2SD2212 / 2SD2143 / 2SD1866 External dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2SD22124.02) Strong protection against reverse surges due to "L" 1.0 2.5 0.5 loads. (1)(2)3) Built-in resistor between base and emitter. (3)4)

2SD2114K / 2SD2144STransistorsHigh-current Gain MediumPower Transistor (20V, 0.5A)2SD2114K / 2SD2144S External dimensions (Units : mm) Features2SD2114K1) High DC current gain.2.90.21.1+0.21.90.2 -0.1 hFE = 1200 (Typ.)0.80.10.95 0.952) High emitter-base voltage.(1) (2)00.1 VEBO =12V (Min.)3) Low VCE (sat).(3) VCE (sat) = 0.18V (Typ.)+0.10.15

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit : mm) Features 1) High DC current gain. 2SD2114K2.90.21.1+0.21.90.2 -0.1 hFE = 1200 (Typ.) 0.80.10.95 0.952) High emitter-base voltage. (1) (2)00.1 VEBO =12V (Min.) 3) Low VCE (sat). (3)+0.1 VCE (sat) = 0.18V (Ty

2SD2142K Transistors High-gain Amplifier Transistor (30V, 0.3A) 2SD2142K Dimensions (Unit : mm) Features 1) Darlington connection for a high hFE. SMT3(DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA) 2.9 1.12) High input impedance. 0.4 0.8(3) Inner circuit (2) (1)C0.95 0.950.151.9(1)Emitter(2)BaseB Each lead has same dimensions(3)Collector

Medium Power Transistor (Motor, Relay drive) (6010V, 2A) 2SD2143 Features Dimensions (Unit : mm) 1) Built-in zener diode between collector and base. 5.5 1.52) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. 0.9C0.5Absolute maximum ratings (Ta=25C) Parameter Symbol Limit

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397TransistorsMedium Power Transistor(Motor, Relay drive) (6010V, 2A)2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.2) Strong protection against reverse surges due to "L"4.02SD22121.0 2.5 0.5loads.(1)3) Built-in resistor between base and emitter.(2)

2SD2142 0.3A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Darlington connection for a high hFE. AL High input impedance. 33Top View C BMARKING 11 22K ER1M DH JF GPACKAGE INFORMATION Package MPQ LeaderSize Millimeter Millimeter REF. R

2S 2142 DTRANSISOR (NPN)SOT23 FEATURES Darlington Connection for a High hFE High Input Impedance MARKING: R1M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V V Emitter-Base Voltage 12 V EBOI Collector Current 300 mA C

SMD Type TransistorsNPN Transistors2SD2142SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=32V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD214DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 100V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching appli

isc Product Specificationisc Silicon NPN Power Transistor 2SD2148DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon NPN Power Transistor 2SD2140DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1421Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.Optimum for the output stage of a HiFi audio amplifierABSOLUTE MAXI

isc Silicon NPN Power Transistors 2SD2143DESCRIPTIONDC Current Gain -h :1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR