2SD2184 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD2184
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90(typ) MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: MT2
2SD2184 Transistor Equivalent Substitute - Cross-Reference Search
2SD2184 Datasheet (PDF)
2sd2184 e.pdf
Transistor2SD2184Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14382.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat). 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute
2sd2184.pdf
Transistor2SD2184Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14382.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat). 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute
2sd2181.pdf
Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request
2sd2185 e.pdf
Transistor2SD2185Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14401.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipment45and automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.
2sd2185.pdf
Transistor2SD2185Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14401.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipment45and automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.
2sd2185.pdf
SMD Type TransistorsNPN Transistors2SD2185SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=50V Complementary to 2SB14400.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V
2sd218.pdf
isc Silicon NPN Power Transistor 2SD218DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V (Max.)@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow saturation voltageExcellent current gain linearityABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: HMBTA42 | 3CD6 | 2SD2206A | 2SD2227S
History: HMBTA42 | 3CD6 | 2SD2206A | 2SD2227S
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050