2SD221F Datasheet. Specs and Replacement
Type Designator: 2SD221F
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO37
- BJT ⓘ Cross-Reference Search
2SD221F datasheet
8.1. Size:126K sanyo
2sd2219.pdf 
Ordering number EN3364 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1468/2SD2219 30V/8A High-Speed Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, etc. unit mm 2041A Features [2SB1468/2SD2219] Micaless package facilitating mounting. Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) ma... See More ⇒
8.2. Size:121K sanyo
2sd2218.pdf
Ordering number EN3363 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1467/2SD2218 General High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2041A Features [2SB1467/2SD2218] Micaless package facilitating mounting. Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max.... See More ⇒
8.3. Size:100K nec
2sd2217.pdf
DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT mm) frequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC out to drivers such as pulse moto... See More ⇒
8.4. Size:87K rohm
2sd2212 2sd2143 2sd1866.pdf
2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 External dimensions (Unit mm) Features 1) Built-in zener diode between collector and base. 2SD2212 4.0 2) Strong protection against reverse surges due to "L" 1.0 2.5 0.5 loads. (1) (2) 3) Built-in resistor between base and emitter. (3) 4) ... See More ⇒
8.5. Size:63K rohm
2sd2211 2sd1918 2sd1857a.pdf
2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate) ... See More ⇒
8.7. Size:63K rohm
2sd2211.pdf
2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate) ... See More ⇒
8.8. Size:71K rohm
2sd1866 2sd2212 2sd2212 2sd2143 2sd1866 2sd2397.pdf
2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" 4.0 2SD2212 1.0 2.5 0.5 loads. (1) 3) Built-in resistor between base and emitter. (2) ... See More ⇒
8.9. Size:49K panasonic
2sd2215.pdf
Power Transistors 2SD2215, 2SD2215A Silicon NPN triple diffusion planar type Unit mm 7.0 0.3 3.5 0.2 For power amplification 3.0 0.2 Features High collector to base voltage VCBO 1.1 0.1 0.85 0.1 I type package enabling direct soldering of the radiating fin to 0.75 0.1 0.4 0.1 the printed circuit board, etc. of small electronic equipment. 2.3 0.2 Absolute Maximum... See More ⇒
8.10. Size:40K panasonic
2sd2216 e.pdf
Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1462 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Rati... See More ⇒
8.11. Size:40K panasonic
2sd2216j e.pdf
Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1462J 1.60 0.05 0.80 0.80 0.05 0.425 0.425 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. +0.05 0.85 0... See More ⇒
8.12. Size:36K panasonic
2sd2216.pdf
Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1462 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Rati... See More ⇒
8.13. Size:42K panasonic
2sd2210.pdf
Transistor 2SD2210 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). 45 Low ON resistance Ron. High foward current transfer ratio hFE. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25 C) 3.0 0... See More ⇒
8.14. Size:46K panasonic
2sd2210 e.pdf
Transistor 2SD2210 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). 45 Low ON resistance Ron. High foward current transfer ratio hFE. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25 C) 3.0 0... See More ⇒
8.15. Size:32K hitachi
2sd2213.pdf
2SD2213 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline TO-92MOD 2 3 ID 1. Emitter 15 k 0.5 2. Collector (Typ) (Typ) 1 3. Base 3 2 1 2SD2213 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 8V Collector current ... See More ⇒
8.16. Size:905K kexin
2sd2210.pdf
SMD Type Transistors NPN Transistors 2SD2210 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VE... See More ⇒
8.17. Size:984K kexin
2sd2211.pdf
SMD Type Transistors NPN Transistors 2SD2211 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=160V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage... See More ⇒
8.18. Size:907K kexin
2sd2212.pdf
SMD Type Transistors NPN Transistors 2SD2212 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=50V C 0.42 0.1 0.46 0.1 B R1 R2 1.Base E 2.Collector R1 3.5k R2 300 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCE... See More ⇒
Detailed specifications: 2SD2204, 2SD2206, 2SD2209, 2SD220F, 2SD221, 2SD2210, 2SD2214, 2SD2216, 2SC2655, 2SD222, 2SD2220, 2SD2225, 2SD223, 2SD2232, 2SD2233, 2SD2237D, 2SD224
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