2SD227G pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SD227G Specs and Replacement

Type Designator: 2SD227G

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO92

2SD227G Substitution

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2SD227G datasheet

8.1. Size:219K toshiba

2sd2271.pdf pdf_icon

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8.2. Size:57K panasonic

2sd2276.pdf pdf_icon

Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1503 20.0 0.5 5.0 0.3 3.0 Features Optimum for 110W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat) ... See More ⇒

8.3. Size:56K panasonic

2sd2273.pdf pdf_icon

Power Transistors 2SD2273 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1500 20.0 0.5 5.0 0.3 3.0 Features Optimum for 40W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat) ... See More ⇒

8.4. Size:57K panasonic

2sd2275.pdf pdf_icon

Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1502 20.0 0.5 5.0 0.3 3.0 Features Optimum for 55W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat) ... See More ⇒