2SD227G Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD227G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO92
2SD227G Transistor Equivalent Substitute - Cross-Reference Search
2SD227G Datasheet (PDF)
2sd2276.pdf
Power Transistors2SD2276Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB150320.0 0.5 5.0 0.33.0FeaturesOptimum for 110W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):
2sd2273.pdf
Power Transistors2SD2273Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB150020.0 0.5 5.0 0.33.0FeaturesOptimum for 40W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):
2sd2275.pdf
Power Transistors2SD2275Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB150220.0 0.5 5.0 0.33.0FeaturesOptimum for 55W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):
2sd2276.pdf
isc Silicon NPN Darlington Power Transistor 2SD2276DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 7A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 7A, I = 7mA)CE(sat) C BComplement to Type 2SB1503Minimum Lot-to-Lot variations for robust deviceperformance and reliable op
2sd2271.pdf
isc Silicon NPN Darlington Power Transistor 2SD2271DESCRIPTIONHigh DC Current Gain-: h = 500(Min)@ (V = 2V, I = 5A)FE CE CHigh Breakdown Voltage :V (sus)=200VMinCEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor drive applicationsHigh current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
2sd2275.pdf
isc Silicon NPN Darlington Power Transistor 2SD2275DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 4A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 4A, I = 4mA)CE(sat) C BComplement to Type 2SB1502Minimum Lot-to-Lot variations for robust deviceperformance and reliable op
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2N6726 | 3CG1197K | 2N676 | 3CA5680
History: 2N6726 | 3CG1197K | 2N676 | 3CA5680
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