All Transistors. 2SD227Y Datasheet

 

2SD227Y Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD227Y

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 120 MHz

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO92

2SD227Y Transistor Equivalent Substitute - Cross-Reference Search

 

2SD227Y Datasheet (PDF)

4.1. 2sd2271.pdf Size:219K _toshiba

2SD227Y
2SD227Y



4.2. 2sd2276.pdf Size:57K _panasonic

2SD227Y
2SD227Y

Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm ? 3.3 0.2 Complementary to 2SB1503 20.0 0.5 5.0 0.3 3.0 Features Optimum for 110W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V 1.5 1.5 2.0 0.3 2.7 0.3 3.0 0.3 Absolute Maximum Ratings (

 4.3. 2sd2275.pdf Size:57K _panasonic

2SD227Y
2SD227Y

Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm ? 3.3 0.2 Complementary to 2SB1502 20.0 0.5 5.0 0.3 3.0 Features Optimum for 55W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V 1.5 1.5 2.0 0.3 2.7 0.3 3.0 0.3 Absolute Maximum Ratings (T

4.4. 2sd2273.pdf Size:56K _panasonic

2SD227Y
2SD227Y

Power Transistors 2SD2273 Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm ? 3.3 0.2 Complementary to 2SB1500 20.0 0.5 5.0 0.3 3.0 Features Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V 1.5 1.5 2.0 0.3 2.7 0.3 3.0 0.3 Absolute Maximum Ratings (T

 4.5. 2sd2276.pdf Size:271K _inchange_semiconductor

2SD227Y
2SD227Y

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2276 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 7A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 7A, IBB= 7mA) ·Complement to Type 2SB1503 APPLICATIONS ·Designed for power a

4.6. 2sd2275.pdf Size:271K _inchange_semiconductor

2SD227Y
2SD227Y

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2275 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 4A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 4A, IBB= 4mA) ·Complement to Type 2SB1502 APPLICATIONS ·Designed for power a

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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