2SD2301 Datasheet and Replacement

2SD2300Silicon NPN Triple DiffusedApplicationCTV horizontal deflection outputFeatures High breakdown voltageVCBO = 1500 V Built-in damper diode typeOutlineTO-3PFM211. Base ID2. Collector 3. Emitter13232SD2300Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to emitter voltage VCES 1500 VEmitter to base voltage VEBO 6V

isc Silicon NPN Power Transistor 2SD2300DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for CTV horizontal deflection output applications.ABSOLUTE MAXIMU

2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2387 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SB1558 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-emitter voltage VCEO 140 VEmitter-base voltage VEBO 5 V

2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2386 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SB1557 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-emitter voltage VCEO 140 VEmitter-base voltage VEBO 5 V

2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2384 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SB1555 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-emitter voltage VCEO 140 VEmitter-base voltage VEBO 5 V

2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2385 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SB1556 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-emitter voltage VCEO 140 VEmitter-base voltage VEBO 5 V

Ordering number:EN4664NPN Epitaxial Planar Silicon Transistor2SD2324Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains a diode between colletor and emitter.2018B Contains a bias resistor between base and emitter.[2SD2324] Large current capacity.0.4 Small-sized package facilitating the realization of 0.16

DATA SHEETSILICON TRANSISTOR2SD2383NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SD2383 is an element realizing high voltage in small 2.8 0.2dimension. This transistor is ideal for downsizing sets +0.10.65 0.151.5requiring high voltage. 2FEATURES High voltage 3 Small dimension 1 ORDERING

Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)

2SB1566TransistorsTransistors2SD2395(94L-459-B350)(94L-1101-D350)296

High-current gain Power Transistor (60V, 3A) 2SD2318 Features Dimensions (Unit : mm) 1) High DC current gain. 2) Low saturation voltage. 5.5 1.5(Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) 0.9Absolute maximum ratings (Ta=25C) C0.5Parameter Symbol Limits UnitCollector-base voltage VCBO 80 V0.8Min.(1) Base1.5Collector-emitter voltage VCEO 60 V2.5 (2) Collec

2SD2351DatasheetGeneral Purpose Transistor (50V, 150mA)lOutlinel SOT-323 Parameter Value SC-70 VCEO50VIC150mAUMT3lFeatures lInner circuitl l1)High DC current gain.2)High emitter-base voltage. (VCBO=12V)3)Low saturation voltage. (Max. VCE(sat)=300mV at IC/ IB=50mA/5mA)lApplicationlLOW FREQUENCY AMPLIFIERlPack

2SD2391DatasheetMiddle Power Transistor (60V / 2A)lOutlinel SOT-89 Parameter Value SC-62 VCEO60VIC2AMPT3lFeatures lInner circuitl l1)Low saturation voltage, tipicallyVCE(sat)=130mV at IC/IB=1A/50mA.2)Collector-emitter voltage=60V3)PD=2W (Mounted on a ceramic board(40400.7mm) ).4)Complementary PNP Types : 2SB

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397TransistorsMedium Power Transistor(Motor, Relay drive) (6010V, 2A)2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.2) Strong protection against reverse surges due to "L"4.02SD22121.0 2.5 0.5loads.(1)3) Built-in resistor between base and emitter.(2)

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit : mm) 1) High DC current gain. 2SD27072) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.20.2 0.8 0.2(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2)(3)(1)(1) Base

2SD2396TransistorsTransistors2SC5060(96-819-D351)(96-733-D416)323

2SD2394TransistorsPower Transistor (60V, 3A)2SD2394 Features External dimensions (Units : mm)1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB = 2A / 0.2A)10.0 4.53.2 2.8 2) Excellent DC current gain characteristics.3) Wide SOA (safe operating area).1.21.30.80.752.54 2.54 2.6 (1) Base(Gate)(1) (2) (3)(2) Collector(Drain)( )(1) (2) (3) (3) Emit

Transistor2SD2359Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipment45and automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.040.5 0.081.5 0.13.0

Transistor2SD2357Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB15371.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Large collector power dissipation PC.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-0.

Transistor2SD2345Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Low noise voltage NV.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.2 0.1Collector to b

Power Transistors2SD2374, 2SD2374ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB1548 and 2SB1548AUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity4.6 0.2 9.9 0.3Low collector to emitter saturation voltage VCE(sat)2.9 0.2Full-pack package which can be installed to the heat sink withone scr

Transistor2SD2321Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 40 V1.2

Transistors2SD2358Silicon NPN epitaxial planer typeUnit: mm2.50.11.05For low-frequency output amplification6.90.1 0.05 (1.45)0.7 4.0 0.8Complementary to 2SB1538 Features0.65 max. Low collector to emitter saturation voltage VCE(sat):

Transistor2SD2359Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipment45and automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.040.5 0.081.5 0.13.0

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Transistor2SD2357Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB15371.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Large collector power dissipation PC.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-0.

Transistor2SD2321Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 40 V1.2

Power Transistors2SD2375Silicon NPN triple diffusion planar typeUnit: mm4.60.2For power amplification with high forward current transfer ratio 9.90.32.90.2 3.20.1 Features High forward current transfer ratio hFE which has satisfactory lin-earity Full-pack package which can be installed to the heat sink with onescrew1.40.22.60.11.60.20.8

Transistor2SD2345Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Low noise voltage NV.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.2 0.1Collector to b

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

Power Transistor 2SD2382Absolute Maximum Ratings Electrical Characteristics External Dimensions FM20 (full-mold)(Ta=25C) (Ta=25C)Symbol Ratings Unit Symbol Test Conditions Ratings Unit4.2V 65 5 V I V = 60V 10max ACBO CBO CB 10.03.32.8C0.5V 65 5 V I V = 6V 10max ACEO EBO EB V 6 V V I = 50mA 60 to 70 VEBO CEO C I 6 (pulse 10) A h V = 1V, I = 1A 700

2SD235 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB435ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 40 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25 PC 25 W Junction

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2391 TRANSISTOR (NPN) SOT-89-3L FEATURES Low VCE(sat) 1.BASE 1 2 3 2.COLLECTOR Marking: DT 3.EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Vol

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate TransistorsTO 220F 2SD2396 TRANSISTOR (NPN)FEATURES Available in TO-220 F package Darling connection provides high dc current gain (hFE)121. BASE3 Large collector power dissipation Low frequency and Power amplifier 2. COLLECTOR3. EMITTER Equivalent Circuit 2SD2396=D

Equivalent circuit CBDarlington 2SD2389(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SD2389 Symbol Conditions 2SD2389 UnitUnit0.24.80.415.6VCBO 160 ICBO VCB

CEquivalent circuitBDarlington 2SD2390(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SD2390 Unit Symbol Conditions 2SD2390 Unit0.24.80.415.6VCBO 160 V ICBO VC

2SD2353(BR3DA2353F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features ,V CESATHigh DC current gain ,low collector saturation voltage. / Applications For power amplification. / E

2SD2395(3DA2395) NPN /SILICON NPN TRANSISTOR : , Purpose: Voltage regulator, DC-DC converter and relay driver audio frequency power Amplifier. : ,, 2SB1566(3CA1566) Features: Low V ,wide SOA, complements the 2SB1566(3

2SD2396(BR3DA2396F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features ,,,, High DC current gain),low VCE(sat),large collector power dissipation, wide SOA. / Applications

ST 2SD2391U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 60 VEmitter Base Voltage VEBO 6 VCollector Current IC 2 APeak Collector Current (PW = 10 ms) ICP 6 A0.5 Ptot W Total Power Dissipation2 1) Junction Temperature Tj 150 Storage Temperatu

SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsProduct specification2SD2318TO-252Unit: mm+0.1

SMD Type TransistorsNPN Transistors2SD2324SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=800mA1 2 Collector Emitter Voltage VCEO=15V+0.050.95+0.1-0.1 0.1 -0.01-0.1C 1.9+0.11.BaseB2.Emitter3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20

SMD Type TransistorsNPN Transistors2SD23591.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Complementary to 2SB15390.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Col

SMD Type TransistorsNPN Transistors2SD23571.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Complementary to 2SB15370.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collector - Emitter Voltage VCE

SMD Type TransistorsNPN Transistors2SD23911.70 0.1 Features Low saturation voltage Collector-emitter voltage =60V0.42 0.1 Pc = 2W (on 40X40X0.7mm ceramic board). 0.46 0.1 Complements the 2SB1561.1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Volt

SMD Type TransistorsNPN Transistors2SD2383SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=300V+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collec

isc Silicon NPN Darlington Power Transistor 2SD2399DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 2A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low fr

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2333DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2340DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain: h = 5000(Min) @I = 3AFE CLow Collector Saturation Voltgae-: V = 2.5V(Max.)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudior

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2374 2SD2374A DESCRIPTION With TO-220F package Complement to type 2SB1548/1548A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified

isc Silicon NPN Power Transistor 2SD2395DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0 (Max)@ I = 2ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1566Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and driverapplicationsABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD2374DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = 1.2V(Max)@ (I = 3A, I = 0.375A)CE(sat) C BComplement to Type 2SB1548Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2348DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Saturation VoltageHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon NPN Darlington Power Transistor 2SD2389DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 6A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 6A, I = 6mA)CE(sat) C BComplement to Type 2SB1559Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

isc Silicon NPN Power Transistor 2SD234DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.2V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB434Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2328DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 3.0V(Max)@ I = 10A, I = 1ACE(sat) C BHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2349DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Saturation VoltageHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon NPN Power Transistor 2SD235DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB435Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXI

isc Silicon NPN Darlington Power Transistor 2SD2390DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = 7AFE CLow-Collector Saturation Voltage-: V = 2.5V(Max.)@I = 7ACE(sat) CComplement to Type 2SB1560Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio, series regulator and general purposeapplications

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2397DESCRIPTIONHigh DC Current Gain: h = 1000(Min) @I = 1AFE CLow Collector Saturation Voltgae-: V = 1.5V(Max.)@ I = 1ACE(sat) CBuilt-in zener diode between collector and baseMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotorRelay driveABS

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2335DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2331DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD237DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a

Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION With TO-3P(I) package Complement to type 2SB1557 High breakdown voltage:VCEO=140V(Min) APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Emitte

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2398DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 1AFE CLow Collector Saturation Voltgae-: V = 1.5V(Max.)@ I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotorR

isc Silicon NPN Darlington Power Transistor 2SD2384DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000(Min)@I = 6AFE CComplement to Type 2SB1555Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Darlington Power Transistor 2SD2385DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000(Min)@I = 7AFE CComplement to Type 2SB1556Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

\isc Silicon NPN Power Transistor 2SD2374ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = 1.2V(Max)@ (I = 3A, I = 0.375A)CE(sat) C BComplement to Type 2SB1548AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLIC

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2396DESCRIPTIONLow Collector Saturation VoltageHigh DC current gainLarge collector power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

isc Silicon NPN Power Transistor 2SD2394DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0 (Max)@ I = 2ACE(sat) CGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and driverapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a