2SD2349 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD2349
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 170 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: ISOWATT218
2SD2349 Transistor Equivalent Substitute - Cross-Reference Search
2SD2349 Datasheet (PDF)
2sd2349.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2349DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Saturation VoltageHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sd2345.pdf
Transistor2SD2345Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Low noise voltage NV.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.2 0.1Collector to b
2sd2345 e.pdf
Transistor2SD2345Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Low noise voltage NV.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.2 0.1Collector to b
2sd2340.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2340DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain: h = 5000(Min) @I = 3AFE CLow Collector Saturation Voltgae-: V = 2.5V(Max.)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudior
2sd2348.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2348DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Saturation VoltageHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sd234.pdf
isc Silicon NPN Power Transistor 2SD234DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.2V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB434Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXI
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
