2SD234G Datasheet. Specs and Replacement
Type Designator: 2SD234G
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 0.75 MHz
Collector Capacitance (Cc): 400 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
- BJT ⓘ Cross-Reference Search
2SD234G datasheet
8.1. Size:38K panasonic
2sd2345.pdf 
Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 Low noise voltage NV. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.2 0.1 Collector to b... See More ⇒
8.2. Size:42K panasonic
2sd2345 e.pdf
Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 Low noise voltage NV. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.2 0.1 Collector to b... See More ⇒
8.5. Size:192K inchange semiconductor
2sd2340.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2340 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain h = 5000(Min) @I = 3A FE C Low Collector Saturation Voltgae- V = 2.5V(Max.)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio r... See More ⇒
8.6. Size:207K inchange semiconductor
2sd2348.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2348 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low Saturation Voltage High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
8.7. Size:213K inchange semiconductor
2sd234.pdf
isc Silicon NPN Power Transistor 2SD234 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.2V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB434 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXI... See More ⇒
8.8. Size:207K inchange semiconductor
2sd2349.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2349 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low Saturation Voltage High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
Detailed specifications: 2SD2337C, 2SD234, 2SD2342, 2SD2342B, 2SD2342C, 2SD2344, 2SD2348, 2SD2349, A1015, 2SD234O, 2SD234R, 2SD234Y, 2SD235, 2SD2352, 2SD2353, 2SD235G, 2SD235O
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