2SD246 Datasheet, Equivalent, Cross Reference Search

2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm High DC current gain: hFE (1) = 800 to 3200 (V = 5 V, I = 0.1 A) CE C Low saturation voltage: V = 0.3 V (typ.) (I = 0.5 A, I = 5 mA) CE (sat) C BMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter v

2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm High DC current gain: hFE (1) = 800 to 3200 (V = 5 V, I = 0.2 A) CE C Low saturation voltage: V = 0.4 V (typ.) (I = 1 A, I = 10 mA) CE (sat) C B Complementary to 2SB1602 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage

DATA SHEETSILICON TRANSISTOR2SD2463NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SD2463 is a Darlington connection transistor with on- PACKAGE DRAWING (UNIT: mm)chip dumper diode in collector to emitter and zener diode incollector to base. This transistor is ideal for use in acuatordrives such as motors, relays, and solenoids.FE

Power Transistors2SD2466, 2SD2466ASilicon NPN epitaxial planar typeFor low-voltage switchingComplementary to 2SB1604Unit: mmFeatures4.6 0.2 Low collector to emitter saturation voltage VCE(sat)9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Full-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screwAbsolute Maximum Rat

Transistor2SD2460Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 20 V1.27 1.27C

Power Transistors2SD2467Silicon NPN epitaxial planar typeFor power switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package with outstanding insulation, which can be in-2.6 0.1stalled to the heat sink wi

Transistor2SD2460Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 20 V1.27 1.27C

Power Transistors2SD2465, 2SD2465ASilicon NPN epitaxial planar typeFor low-voltage switchingComplementary to 2SB1603Unit: mmFeatures4.6 0.2 Low collector to emitter saturation voltage VCE(sat)9.9 0.3 2.9 0.2 3.2 0.1 High-speed switching Full-pack package superior in insulation, which can be installedto the heat sink with one screwAbsolute Maximum Ratings (T

Power Transistors2SD2468Silicon NPN epitaxial planar typeFor power switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package with outstanding insulation, which can be in-2.6 0.1stalled to the heat sink wi

Power Transistors2SD2469, 2SD2469ASilicon NPN epitaxial planar typeFor power switchingComplementary to 2SB1607Unit: mmFeatures 4.6 0.2 Low collector to emitter saturation voltage VCE(sat)9.9 0.3 2.9 0.2 3.2 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in-