2SD2495O Specs and Replacement
Type Designator: 2SD2495O
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 110 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 55 pF
Forward Current Transfer Ratio (hFE), MIN: 5000
Package: TO220F
2SD2495O Substitution
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2SD2495O datasheet
Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2495 DESCRIPTION With TO-220F package Complement to type 2SB1626 APPLICATIONS For audio,series regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARA... See More ⇒
C Equivalent circuit B Darlington 2SD2495 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1626) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SD2495 Symbol Conditions 2SD2495 Unit Unit 0.2 4.2 0.2 10.1 c0.5 VCBO 110 ICB... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD2495 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 5A, I = 5mA) CE(sat) C B Complement to Type 2SB1626 Minimum Lot-to-Lot variations for robust device performance and reliable op... See More ⇒
Detailed specifications: 2SD247, 2SD249, 2SD2493O, 2SD2493P, 2SD2493Y, 2SD2494O, 2SD2494P, 2SD2494Y, BC556, 2SD2495P, 2SD2495Y, 2SD24Y, 2SD25, 2SD250, 2SD251, 2SD254, 2SD255
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