2SD274 Datasheet. Specs and Replacement
Type Designator: 2SD274
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
- BJT ⓘ Cross-Reference Search
2SD274 datasheet
9.1. Size:329K toshiba
2sd2719.pdf 

2SD2719 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) 2SD2719 Solenoid Drive Applications Unit mm Motor Drive Applications High DC current gain h = 2000 (min) (V = 2 V, I = 1 A) FE CE C Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V... See More ⇒
9.2. Size:70K rohm
2sd2702.pdf 

2SD2702 Transistors General purpose amplification (12V, 1.5A) 2SD2702 Dimensions (Unit mm) Application Low frequency amplifier Features 1) A collector current is large. 2) Collector saturation voltage is low. ... See More ⇒
9.3. Size:1231K rohm
2sd2707.pdf 

2SD2707 Datasheet General Purpose Transistor (50V, 150mA) lOutline l SOT-723 Parameter Value SC-105AA VCEO 50V IC 150mA VMT3 lFeatures lInner circuit l l 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. (Max.VCE(sat)=300mV at IC/IB=50/5mA) lApplication l LOW FREQENCY AMPLIFIER, DRIVER ... See More ⇒
9.5. Size:987K rohm
2sd2704k.pdf 

For Muting (20V, 0.3A) 2SD2704K Features Dimensions (Unit mm) 1) High DC current gain. 2SD2704K hFE = 820 to 2700 SOT-346 2.9 1.1 2) High emitter-base voltage. VEBO = 25V (Min.) 0.4 0.8 3) Low Ron (3) Ron= 0.7 (Typ.) Structure Epitaxial planar type NPN silicon transistor ( ) ( ) 2 1 0.95 0.95 (1) Emitter 0.15 (2) Base 1.9 (3) Collector Each lea... See More ⇒
9.6. Size:144K rohm
2sd2704k 2sd2705k.pdf 

For Muting (20V, 0.3A) 2SD2704K / 2SD2705S Features Dimensions (Unit mm) 1) High DC current gain. 2SD2704K hFE = 820 to 2700 2.9 1.1 2) High emitter-base voltage. 0.4 0.8 VEBO = 25V (Min.) (3) 3) Low Ron Ron= 0.7 (Typ.) (2) (1) Structure 0.95 0.95 (1) Emitter 0.15 Epitaxial planar type (2) Base 1.9 (3) Collector NPN silicon transistor Each lead ha... See More ⇒
9.7. Size:91K rohm
2sd2701.pdf 

2SD2701 Transistors Low frequency amplifier 2SD2701 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 350mV At IC = 1A / IB = 50mA ROHM TUMT3 Abbreviated symbol FZ (1) Base (2) Emitter (3) Collector Packaging specifications Absolute maximum ratings (Ta=25 C) Parameter Symbol Limit... See More ⇒
9.8. Size:92K rohm
2sd2700.pdf 

2SD2700 Transistors Low frequency amplifier 2SD2700 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 180mV at IC = 1A / IB = 50mA ROHM TUMT3 Abbreviated symbol FW (1) Base (2) Emitter (3) Collector Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base volta... See More ⇒
9.9. Size:85K rohm
2sd2654 2sd2707 2sd2654 2sd2351 2sd2226k 2sd2227s.pdf 

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit mm) 1) High DC current gain. 2SD2707 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.2 0.2 0.8 0.2 (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2) (3) (1) (1) Base ... See More ⇒
Detailed specifications: 2SD266, 2SD26A, 2SD26B, 2SD26C, 2SD27, 2SD271, 2SD272, 2SD273, D882, 2SD28, 2SD280, 2SD283, 2SD284, 2SD285, 2SD286, 2SD287, 2SD287A
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