All Transistors. 2SD295 Datasheet

 

2SD295 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD295
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3

 2SD295 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD295 Datasheet (PDF)

 9.1. Size:225K  bruckewell
2sd2908.pdf

2SD295
2SD295

Low VCE(sat) transistor(80V,0.7A) 2SD2908 FEATURES Pb Low VCE(sat). Lead-free Excellent DC current gain characteristics. Complements the 2SB1386 SOT-89ORDERING INFORMATION Type No. Marking Package Code 2SD2908 AHQ/AHR SOT-89 MAXIMUM RATING @ Ta=25 unless otherwise specifiedSymbol Parameter Value UnitsCollector-Base Voltage VCBO 50 VCollector-Emitter Voltag

 9.2. Size:194K  inchange semiconductor
2sd299.pdf

2SD295
2SD295

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD299DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 4.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABS

 9.3. Size:180K  inchange semiconductor
2sd291.pdf

2SD295
2SD295

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD291DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR) CEOCollector Power Dissipation-: P = 18W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMU

 9.4. Size:220K  inchange semiconductor
2sd2901.pdf

2SD295
2SD295

isc Silicon NPN Power Transistor 2SD2901DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 900V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 9.5. Size:180K  inchange semiconductor
2sd297.pdf

2SD295
2SD295

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD297DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR) CEOCollector Power Dissipation-: P = 25W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMU

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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