2SD296 PDF and Equivalents Search

 9.1. Size:225K  bruckewell

 2sd2908.pdf

Low VCE(sat) transistor(80V,0.7A) 2SD2908 FEATURES Pb Low VCE(sat). Lead-free Excellent DC current gain characteristics. Complements the 2SB1386 SOT-89 ORDERING INFORMATION Type No. Marking Package Code 2SD2908 AHQ/AHR SOT-89 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 50 V Collector-Emitter Voltag... See More ⇒

 9.2. Size:194K  inchange semiconductor

 2sd299.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD299 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 4.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABS... See More ⇒

 9.3. Size:180K  inchange semiconductor

 2sd291.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD291 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR) CEO Collector Power Dissipation- P = 18W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMU... See More ⇒

 9.4. Size:220K  inchange semiconductor

 2sd2901.pdf

isc Silicon NPN Power Transistor 2SD2901 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 900V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

 9.5. Size:180K  inchange semiconductor

 2sd297.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD297 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR) CEO Collector Power Dissipation- P = 25W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMU... See More ⇒