2SD313F pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

8.1. Size:116K utc

UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD313L-x-TA3-T 2SD313G-x-TA3-T TO-220 B C E Tube 2SD313L-x-TF3-T 2SD313G-x-... See More ⇒

8.2. Size:115K mospec

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A A A ... See More ⇒

8.3. Size:263K jiangsu

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SD313 TRANSISTOR (NPN) TO-220-3L 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A 3. EMITTER DC Current Gain hFE=40 320@IC=1A Complementray to PNP 2SB507 Equivalent Circuit 2SD313=Device code Solid dot=Green moldinn com... See More ⇒

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2SD313(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40 320@IC=1A Complementray to PNP 2SB507 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltag... See More ⇒

8.5. Size:179K wietron

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2SD313 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 Features 1 BASE 2 * DC Current Gain hFE = 40-320 @IC = 1.0A 3 1 * Low VCE(sat) 1.0V(MAX) @IC = 2.0A, IB = 0.2A 1. BASE 2. COLLECTOR * Complememtary to NPN 2SB507 3. EMITTER 3 TO-220 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit VCBO Collector to Base Voltage 60 V VCE... See More ⇒

8.6. Size:519K blue-rocket-elect

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2SD313(BR3DD313R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features Low Current Low Voltage. / Applications Low frequency power amplifier applications. / Equivalent Circuit ... See More ⇒

8.7. Size:214K inchange semiconductor

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isc Silicon NPN Power Transistor 2SD313 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 2.0A CE(sat) C Complement to Type 2SB507 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the output stage of 15W to 25W AF power amplifier... See More ⇒