2SD327 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SD327 Specs and Replacement

   Type Designator: 2SD327
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings

Electrical Characteristics

   Transition Frequency (ft): 120 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO92

2SD327 Substitution

- BJT ⓘ Cross-Reference Search

2SD327 datasheet

9.1. Size:46K no
2sd328.pdf pdf_icon

... See More ⇒

9.2. Size:146K china
3da325 2sd325.pdf pdf_icon

3DA325(2SD325) NPN PCM TC=25 1.75 W ICM 1.5 A Tjm 150 Tstg -55 150 VCE=10V Rth 71 /W IC=0.3A V(BR)CBO ICB=1mA 35 V V(BR)CEO ICE=1mA 35 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.1 A IEBO VCE=5.0V 1.0 A VBEsat 1.5 IC=1.5A V IB... See More ⇒

9.3. Size:194K inchange semiconductor
2sd320.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD320 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 2.0V(Max)@ I = 2A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose... See More ⇒

9.4. Size:213K inchange semiconductor
2sd325.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD325 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 1.5A CE(sat) C Complement to Type 2SB511 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. Rec... See More ⇒

Detailed specifications: 2SD323 , 2SD324 , 2SD325 , 2SD325C , 2SD325D , 2SD325E , 2SD325F , 2SD326 , MJE350 , 2SD328 , 2SD329 , 2SD33 , 2SD330 , 2SD330C , 2SD330D , 2SD330E , 2SD330F .