2SD33 Specs and Replacement

Type Designator: 2SD33

Material of Transistor: Ge

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO1

 2SD33 Substitution

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2SD33 datasheet

 0.1. Size:33K  sanyo

2sd330.pdf pdf_icon

2SD33

Ordering number 397E PNP/NPN Triple Diffused Planar Silicon Transistors 2SB514/2SD330 50V/2A Low-Frequency Power Amplifier Applications Features Package Dimensions Especially suited for use in output stage of 10W AF unit mm Power amplifier. 2010C Complementary pair with the 2SB514 and 2SD313. [2SB514/2SD330] JEDEC TO-220AB 1 Base ( ) 2SB514 EIAJ SC-46 2 Collector... See More ⇒

 0.2. Size:189K  inchange semiconductor

2sd331.pdf pdf_icon

2SD33

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD331 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 2.0A CE(sat) C Complement to Type 2SB515 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for use in output sta... See More ⇒

 0.3. Size:197K  inchange semiconductor

2sd339.pdf pdf_icon

2SD33

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD339 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 90V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 7.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpos... See More ⇒

 0.4. Size:196K  inchange semiconductor

2sd338.pdf pdf_icon

2SD33

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD338 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 2.0V(Max)@ I = 5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose ... See More ⇒

Detailed specifications: 2SD325C, 2SD325D, 2SD325E, 2SD325F, 2SD326, 2SD327, 2SD328, 2SD329, TIP120, 2SD330, 2SD330C, 2SD330D, 2SD330E, 2SD330F, 2SD331, 2SD331C, 2SD331D

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