All Transistors. 2SD33 Datasheet

 

2SD33 Datasheet and Replacement


   Type Designator: 2SD33
   Material of Transistor: Ge
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO1
 

 2SD33 Substitution

   - BJT ⓘ Cross-Reference Search

   

2SD33 Datasheet (PDF)

 0.1. Size:33K  sanyo
2sd330.pdf pdf_icon

2SD33

Ordering number:397EPNP/NPN Triple Diffused Planar Silicon Transistors2SB514/2SD33050V/2A Low-Frequency Power AmplifierApplicationsFeatures Package Dimensions Especially suited for use in output stage of 10W AFunit:mmPower amplifier.2010C Complementary pair with the 2SB514 and 2SD313.[2SB514/2SD330]JEDEC : TO-220AB 1 : Base( ) : 2SB514EIAJ : SC-46 2 : Collector

 0.2. Size:189K  inchange semiconductor
2sd331.pdf pdf_icon

2SD33

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD331DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 2.0ACE(sat) CComplement to Type 2SB515Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for use in output sta

 0.3. Size:197K  inchange semiconductor
2sd339.pdf pdf_icon

2SD33

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD339DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 90V(Min)(BR) CEOExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 7.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpos

 0.4. Size:196K  inchange semiconductor
2sd338.pdf pdf_icon

2SD33

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD338DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min)(BR) CEOExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage-: V )= 2.0V(Max)@ I = 5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose

Datasheet: 2SD325C , 2SD325D , 2SD325E , 2SD325F , 2SD326 , 2SD327 , 2SD328 , 2SD329 , MPSA42 , 2SD330 , 2SD330C , 2SD330D , 2SD330E , 2SD330F , 2SD331 , 2SD331C , 2SD331D .

History: 2N3771G

Keywords - 2SD33 transistor datasheet

 2SD33 cross reference
 2SD33 equivalent finder
 2SD33 lookup
 2SD33 substitution
 2SD33 replacement

 

 
Back to Top

 


 
.