2SD330C PDF and Equivalents Search

 

2SD330C Specs and Replacement

Type Designator: 2SD330C

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 140 °C

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO220

 2SD330C Substitution

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2SD330C datasheet

 8.1. Size:33K  sanyo

2sd330.pdf pdf_icon

2SD330C

Ordering number 397E PNP/NPN Triple Diffused Planar Silicon Transistors 2SB514/2SD330 50V/2A Low-Frequency Power Amplifier Applications Features Package Dimensions Especially suited for use in output stage of 10W AF unit mm Power amplifier. 2010C Complementary pair with the 2SB514 and 2SD313. [2SB514/2SD330] JEDEC TO-220AB 1 Base ( ) 2SB514 EIAJ SC-46 2 Collector... See More ⇒

 8.2. Size:212K  inchange semiconductor

2sd330.pdf pdf_icon

2SD330C

isc Silicon NPN Power Transistor 2SD330 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 2.0A CE(sat) C Complement to Type 2SB514 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for use in output stage of 10W AF power ampl... See More ⇒

 9.1. Size:189K  inchange semiconductor

2sd331.pdf pdf_icon

2SD330C

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD331 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 2.0A CE(sat) C Complement to Type 2SB515 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for use in output sta... See More ⇒

 9.2. Size:197K  inchange semiconductor

2sd339.pdf pdf_icon

2SD330C

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD339 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 90V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 7.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpos... See More ⇒

Detailed specifications: 2SD325E , 2SD325F , 2SD326 , 2SD327 , 2SD328 , 2SD329 , 2SD33 , 2SD330 , A42 , 2SD330D , 2SD330E , 2SD330F , 2SD331 , 2SD331C , 2SD331D , 2SD331E , 2SD331F .

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