2SD330F Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD330F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 140 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: TO220
2SD330F Transistor Equivalent Substitute - Cross-Reference Search
2SD330F Datasheet (PDF)
2sd330.pdf
Ordering number:397EPNP/NPN Triple Diffused Planar Silicon Transistors2SB514/2SD33050V/2A Low-Frequency Power AmplifierApplicationsFeatures Package Dimensions Especially suited for use in output stage of 10W AFunit:mmPower amplifier.2010C Complementary pair with the 2SB514 and 2SD313.[2SB514/2SD330]JEDEC : TO-220AB 1 : Base( ) : 2SB514EIAJ : SC-46 2 : Collector
2sd330.pdf
isc Silicon NPN Power Transistor 2SD330DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 2.0ACE(sat) CComplement to Type 2SB514Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for use in output stage of 10W AF powerampl
2sd331.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD331DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 2.0ACE(sat) CComplement to Type 2SB515Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for use in output sta
2sd339.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD339DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 90V(Min)(BR) CEOExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 7.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpos
2sd338.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD338DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min)(BR) CEOExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage-: V )= 2.0V(Max)@ I = 5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose
2sd334.pdf
isc Silicon NPN Power Transistor 2SD334DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage 110
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
