2SD355 Datasheet and Replacement

   Type Designator: 2SD355
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92

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2SD355 Datasheet (PDF)

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2sd356.pdf pdf_icon

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2sd352.pdf pdf_icon

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2sd359.pdf pdf_icon

9.4. Size:211K inchange semiconductor
2sd357.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD357DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB527Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF high power dirver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

9.5. Size:181K inchange semiconductor
2sd350.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD350DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers and switching appl

9.6. Size:147K inchange semiconductor
2sd350a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD350A DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For color TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

Datasheet: 2SD348 , 2SD349 , 2SD35 , 2SD350 , 2SD350A , 2SD351 , 2SD352 , 2SD353 , BC327 , 2SD356 , 2SD357 , 2SD358 , 2SD359 , 2SD36 , 2SD360 , 2SD361 , 2SD362 .