2SD362O Specs and Replacement
Type Designator: 2SD362O
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO220
2SD362O Substitution
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2SD362O datasheet
isc Silicon NPN Power Transistor 2SD362 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min) (BR)CEO Collector Power Dissipation- P = 40W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
isc Silicon NPN Power Transistor 2SD363 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector Power Dissipation- P = 40W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD365 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.0V(Max) @I = 2.0A CE(sat) C Complement to Type 2SB512 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier appl... See More ⇒
Detailed specifications: 2SD357, 2SD358, 2SD359, 2SD36, 2SD360, 2SD361, 2SD362, 2SD362N, BC546, 2SD362R, 2SD363, 2SD363A, 2SD363O, 2SD363R, 2SD363Y, 2SD364, 2SD365
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