2SD365A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD365A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO220
2SD365A Transistor Equivalent Substitute - Cross-Reference Search
2SD365A Datasheet (PDF)
2sd365.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD365DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.0V(Max) @I = 2.0ACE(sat) CComplement to Type 2SB512Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier appl
2sd363.pdf
isc Silicon NPN Power Transistor 2SD363DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector Power Dissipation-: P = 40W(Max)@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
2sd362.pdf
isc Silicon NPN Power Transistor 2SD362DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min)(BR)CEOCollector Power Dissipation-: P = 40W(Max)@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
