2SD37 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SD37 Specs and Replacement

Type Designator: 2SD37

Material of Transistor: Ge

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 0.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO1

2SD37 Substitution

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2SD37 datasheet

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isc Silicon NPN Power Transistors 2SD371 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High Power Dissipation- P = 50W(Max)@T =25 C C Complement to Type 2SB531 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD375 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in clocked voltage converters and switching applications. ABSOLUTE MAXIMU... See More ⇒

Detailed specifications: 2SD364, 2SD365, 2SD365A, 2SD366, 2SD366A, 2SD367, 2SD368, 2SD369, 2SC945, 2SD370, 2SD371, 2SD372, 2SD373, 2SD373A, 2SD374, 2SD375, 2SD376