2SD373 Specs and Replacement
Type Designator: 2SD373
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 60 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
2SD373 Substitution
- BJT ⓘ Cross-Reference Search
2SD373 datasheet
isc Silicon NPN Power Transistors 2SD371 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High Power Dissipation- P = 50W(Max)@T =25 C C Complement to Type 2SB531 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD375 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in clocked voltage converters and switching applications. ABSOLUTE MAXIMU... See More ⇒
Detailed specifications: 2SD366A, 2SD367, 2SD368, 2SD369, 2SD37, 2SD370, 2SD371, 2SD372, 2SC2655, 2SD373A, 2SD374, 2SD375, 2SD376, 2SD376A, 2SD377, 2SD378, 2SD379
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