2SD379 Specs and Replacement
Type Designator: 2SD379
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO3
2SD379 Substitution
- BJT ⓘ Cross-Reference Search
2SD379 datasheet
isc Silicon NPN Power Transistors 2SD371 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High Power Dissipation- P = 50W(Max)@T =25 C C Complement to Type 2SB531 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD375 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in clocked voltage converters and switching applications. ABSOLUTE MAXIMU... See More ⇒
Detailed specifications: 2SD373, 2SD373A, 2SD374, 2SD375, 2SD376, 2SD376A, 2SD377, 2SD378, D965, 2SD38, 2SD380, 2SD380A, 2SD381, 2SD382, 2SD383, 2SD384, 2SD385
Keywords - 2SD379 pdf specs
2SD379 cross reference
2SD379 equivalent finder
2SD379 pdf lookup
2SD379 substitution
2SD379 replacement
