2SD406 Specs and Replacement
Type Designator: 2SD406
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: TO39-1
- BJT ⓘ Cross-Reference Search
2SD406 datasheet
9.4. Size:55K jmnic
2sd401a.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base ... See More ⇒
9.5. Size:117K jmnic
2sd401.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter ... See More ⇒
9.6. Size:220K lge
2sd400 to-92mod.pdf
2SD400 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Low-Frequency power Amp, Electronic Governor Applications 8.400 8.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.900 1.100 Symbol Parameter Value Units 0.400 0.600 VCBO Collector-Base Voltage 25 V 13.800 VCEO Collector-Emitter Voltage 25 V 14.200 VE... See More ⇒
9.7. Size:223K lge
2sd400 to-92l.pdf
2SD400 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features 7.800 Low-Frequency power Amp, Electronic Governor Applications 8.200 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 VCBO Collector-Base Voltage 25 V 13.800 14.200 VCEO Collector-Emitter Voltage 25 V VEBO Emi... See More ⇒
9.9. Size:187K inchange semiconductor
2sd402.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD402 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Collector Power Dissipation- P = 30W(Max)@ T = 25 C C Complement to Type 2SB547 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV vertical defl... See More ⇒
9.10. Size:125K inchange semiconductor
2sd401a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mount... See More ⇒
9.11. Size:149K inchange semiconductor
2sd401.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 ... See More ⇒
Detailed specifications: 2SD401O, 2SD401R, 2SD401Y, 2SD402, 2SD402A, 2SD404, 2SD404G, 2SD405, 2N3055, 2SD407, 2SD408, 2SD409, 2SD41, 2SD410, 2SD411, 2SD412, 2SD413
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