All Transistors. 2SD413 Datasheet

 

2SD413 Datasheet and Replacement


   Type Designator: 2SD413
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 12 MHz
   Collector Capacitance (Cc): 24 pF
   Forward Current Transfer Ratio (hFE), MIN: 65
   Noise Figure, dB: -
   Package: TO39
 

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2SD413 Datasheet (PDF)

 9.1. Size:36K  sanyo
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2SD413

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2SD413

DATA SHEETSILICON POWER TRANSISTOR2SB548, 549/2SD414, 415PNP/NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSFEATURES PACKAGE DRAWING (UNIT: mm) Ideal for audio amplifier drivers with 30 W to 50 W output High voltage Available for small mount spaces due to small and thin package Easy to be attached to radiatorsABSOLUTE MAXIMUM RATINGS (Ta = 25

 9.3. Size:49K  no
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2SD413

 9.4. Size:192K  inchange semiconductor
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2SD413

isc Silicon NPN Power Transistor 2SD414DESCRIPTIONWith TO-126packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedComplementary to 2SB548Minimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSRelay drivers, high-speed inverters , converters andOther general high current swit

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: MJ10025 | 2N628 | 2SCR293PFRA | 2N6437A | HE8550 | BF367 | 2SA1386AY

Keywords - 2SD413 transistor datasheet

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