2SD413 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD413
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 12 MHz
Collector Capacitance (Cc): 24 pF
Forward Current Transfer Ratio (hFE), MIN: 65
Noise Figure, dB: -
Package: TO39
2SD413 Transistor Equivalent Substitute - Cross-Reference Search
2SD413 Datasheet (PDF)
2sb548 2sb549 2sd414 2sd415.pdf
DATA SHEETSILICON POWER TRANSISTOR2SB548, 549/2SD414, 415PNP/NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSFEATURES PACKAGE DRAWING (UNIT: mm) Ideal for audio amplifier drivers with 30 W to 50 W output High voltage Available for small mount spaces due to small and thin package Easy to be attached to radiatorsABSOLUTE MAXIMUM RATINGS (Ta = 25
2sd414.pdf
isc Silicon NPN Power Transistor 2SD414DESCRIPTIONWith TO-126packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedComplementary to 2SB548Minimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSRelay drivers, high-speed inverters , converters andOther general high current swit
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
